BSS138BKS,115 NXP Semiconductors, BSS138BKS,115 Datasheet
BSS138BKS,115
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BSS138BKS,115 Summary of contents
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BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 12 August 2011 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using ...
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... NXP Semiconductors 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 3. Ordering information Table 3. Ordering information Type number Package Name BSS138BKS TSSOP6 4. Marking Table 4. ...
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... NXP Semiconductors 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Per transistor V drain-source voltage DS V gate-source voltage GS I drain current D I peak drain current DM P total power dissipation tot Per device P total power dissipation ...
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... NXP Semiconductors 120 P der (%) -75 -25 25 Fig 1. Normalized total power dissipation as a function of junction temperature ( single pulse (3) DC ° 100 ms p (5) DC ° amb Fig 3 ...
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... NXP Semiconductors 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Per transistor R thermal resistance from junction to ambient th(j-a) R thermal resistance from junction to solder point th(j-sp) Per device R thermal resistance from junction to ambient th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm ...
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... NXP Semiconductors 3 10 duty cycle = 1 Z th(j-a) (K/W) 0.75 0.5 0. 0.25 0.2 0.1 0.05 0. −3 − FR4 PCB, mounting pad for drain 1 cm Fig 5. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSS138BKS Product data sheet 60 V, 320 mA dual N-channel Trench MOSFET − ...
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... NXP Semiconductors 7. Characteristics Table 7. Characteristics Symbol Parameter Static characteristics (per transistor) V drain-source (BR)DSS breakdown voltage V gate-source threshold GSth voltage I drain leakage current DSS I gate leakage current GSS R drain-source on-state DSon resistance g forward fs transconductance Dynamic characteristics (per transistor) Q total gate charge G(tot) ...
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... NXP Semiconductors 0 2 (A) 0.3 0.2 0 °C j Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values 6 R DS(on) (Ω) (1) 4 (2) ( 0.1 0 ° Fig 8. ...
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... NXP Semiconductors 0 (A) 0.4 0.2 (2) ( 1.0 V > DSon ( ° 150 °C j Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 2 V GS(th) (V) 1.5 1 0 0.25 mA (1) maximum values (2) typical values (3) minimum values Fig 12. Gate-source threshold voltage as a function of ...
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... NXP Semiconductors ( 0.2 0.4 0 Fig 14. Gate-source voltage as a function of gate charge; typical values ( 150 ° °C j Fig 16. Source current as a function of source-drain voltage; typical values BSS138BKS Product data sheet aaa-000166 1 ...
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... NXP Semiconductors 8. Test information Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. BSS138BKS Product data sheet 60 V, 320 mA dual N-channel Trench MOSFET ...
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... NXP Semiconductors 9. Package outline Plastic surface-mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 0.30 1.1 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE VERSION IEC SOT363 Fig 18. Package outline SOT363 (TSSOP6) BSS138BKS Product data sheet scale ...
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... NXP Semiconductors 10. Soldering 1.5 2.35 0.6 (4×) Fig 19. Reflow soldering footprint for SOT363 (TSSOP6) 4.5 1.3 Fig 20. Wave soldering footprint for SOT363 (TSSOP6) BSS138BKS Product data sheet 2.65 0.4 (2×) 0.5 (4×) 0.5 0.6 (4×) (2×) 0.6 (4×) 1.8 1.5 0.3 1.5 1.3 2.45 5.3 All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date BSS138BKS v.1 20110812 BSS138BKS Product data sheet 60 V, 320 mA dual N-channel Trench MOSFET Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 ...
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... NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. ...
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... In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. ...
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... NXP Semiconductors 14. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.1 General description . . . . . . . . . . . . . . . . . . . . . .1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . .2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . .2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . .5 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . .7 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 11 8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 11 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .12 10 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 11 Revision history ...