STF20N65M5 STMicroelectronics, STF20N65M5 Datasheet - Page 12

• Manufacturer Part Number: STF20N65M5
• Description: MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh(TM) V
• Manufacturer: STMicroelectronics

Specifications of STF20N65M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 650 V
• Continuous Drain Current: 18 A, 72 A
• Resistance Drain-source Rds (on): 0.19 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-220 FP
• Fall Time: 7.5 ns
• Gate Charge Qg: 36 nC
• Power Dissipation: 130 W
• Rise Time: 7.5 ns

Package mechanical data
12/21
Figure 23. D²PAK (TO-263) drawing
Figure 24. D²PAK footprint
a. All dimension are in millimeters
12.20
9.75
(a)
Doc ID 022865 Rev 2
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
16.90
3.50
1.60
0079457_T
5.08
Footprint