STF20N65M5 STMicroelectronics, STF20N65M5 Datasheet - Page 14

• Manufacturer Part Number: STF20N65M5
• Description: MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh(TM) V
• Manufacturer: STMicroelectronics

Specifications of STF20N65M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 650 V
• Continuous Drain Current: 18 A, 72 A
• Resistance Drain-source Rds (on): 0.19 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-220 FP
• Fall Time: 7.5 ns
• Gate Charge Qg: 36 nC
• Power Dissipation: 130 W
• Rise Time: 7.5 ns

Package mechanical data
14/21
Table 11.
Dim.
L20
L30
∅
D1
H1
b1
e1
J1
L1
D
Q
A
E
F
b
c
e
L
P
TO-220 type A mechanical data
15.25
Min.
4.40
0.61
1.14
0.48
2.40
4.95
1.23
6.20
2.40
3.50
3.75
2.65
10
13
Doc ID 022865 Rev 2
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
16.40
28.90
Typ.
1.27
mm
15.75
10.40
Max.
4.60
0.88
1.70
0.70
2.70
5.15
1.32
6.60
2.72
3.93
3.85
2.95
14