STF20N65M5 STMicroelectronics, STF20N65M5 Datasheet - Page 19

• Manufacturer Part Number: STF20N65M5
• Description: MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh(TM) V
• Manufacturer: STMicroelectronics

Specifications of STF20N65M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 650 V
• Continuous Drain Current: 18 A, 72 A
• Resistance Drain-source Rds (on): 0.19 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-220 FP
• Fall Time: 7.5 ns
• Gate Charge Qg: 36 nC
• Power Dissipation: 130 W
• Rise Time: 7.5 ns

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Figure 28. Tape
Figure 29. Reel
A
T
REEL DIMENSIONS
K0
D
Top cover
tape
Full radius
B0
Doc ID 022865 Rev 2
User direction of feed
A0
B
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
P0
Access hole
At sl ot location
40mm min.
Tape slot
in core for
tape start 25 mm min.
width
P1
D
D1
C
P2
Packaging mechanical data
Bending radius
T
G measured at hub
F
N
E
AM08851v2
W
AM08852v2
19/21
R