STF20N65M5 STMicroelectronics, STF20N65M5 Datasheet - Page 20

• Manufacturer Part Number: STF20N65M5
• Description: MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh(TM) V
• Manufacturer: STMicroelectronics

Specifications of STF20N65M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 650 V
• Continuous Drain Current: 18 A, 72 A
• Resistance Drain-source Rds (on): 0.19 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-220 FP
• Fall Time: 7.5 ns
• Gate Charge Qg: 36 nC
• Power Dissipation: 130 W
• Rise Time: 7.5 ns

Revision history
6
20/21
Revision history
Table 14.
06-Mar-2012
01-Feb-2013
Date
Document revision history
Revision
1
2
First release.
– The part numbers STF20N65M5 and STFI20N65M5 have been
– Added: part numbers STB20N65M5 and STI20N65M5
– Modified:
– Added: R
– Updated:
– Added:
Doc ID 022865 Rev 2
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
moved to a separate datasheet.
Table
5, 6, 7,
Section 2.1: Electrical characteristics (curves)
thj-pcb
note1
Section 4: Package mechanical data
8
and
on
Table
note1
2,
on
Changes
Table 4
Table 3
values and typical values of