STF20N65M5 STMicroelectronics, STF20N65M5 Datasheet - Page 7

• Manufacturer Part Number: STF20N65M5
• Description: MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh(TM) V
• Manufacturer: STMicroelectronics

Specifications of STF20N65M5

• Rohs: yes
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 650 V
• Continuous Drain Current: 18 A, 72 A
• Resistance Drain-source Rds (on): 0.19 Ohms
• Mounting Style: Through Hole
• Package / Case: TO-220 FP
• Fall Time: 7.5 ns
• Gate Charge Qg: 36 nC
• Power Dissipation: 130 W
• Rise Time: 7.5 ns

STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
Figure 8.
Figure 10. Capacitance variations
Figure 12. Normalized gate threshold voltage
10000
(norm)
V
1000
GS(th)
1.00
0.80
0.70
1.10
V
0.90
100
(V)
(pF)
10
GS
12
10
C
0
8
-50
6
4
2
1
0.1
0
V
Gate charge vs gate-source voltage Figure 9.
vs temperature
-25
DS
10
0
1
V
25
DD
I
20
D
=520V
=9A
10
50
I D = 250 µA
V DS = V GS
30
75
100
100
40
T
Q
V
J
(°C)
Doc ID 022865 Rev 2
DS
g
AM15591v1
(nC)
AM15589v1
AM05459v1
(V)
400
V
(V)
500
100
0
300
200
Coss
Crss
Ciss
DS
Figure 11. Output capacitance stored energy
Figure 13. Normalized on-resistance vs
R
(norm)
R
0.145
0.155
0.195
0.185
0.175
0.165
0.135
0.125
DS(on)
DS(on)
E
(µJ)
(Ω)
oss
1.9
1.7
1.5
1.3
0.9
0.7
0.5
2.1
1.1
4
7
6
5
3
2
0
-50
1
0
0
Static drain-source on-resistance
temperature
-25
100
V
V GS = 10V
GS
I D = 9 A
0
=10V
5
200 300
25
Electrical characteristics
10
50
400
75
500 600
100
15
T
I
J
D
(°C)
(A)
AM15592v1
AM05460v1
AM15590v1
V
DS
(V)
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