STF20N65M5 STMicroelectronics, STF20N65M5 Datasheet - Page 8

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STF20N65M5

Manufacturer Part Number
STF20N65M5
Description
MOSFET N-ch 650 V 0.168 Ohm 18 A MDmesh(TM) V
Manufacturer
STMicroelectronics
Datasheet

Specifications of STF20N65M5

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
650 V
Continuous Drain Current
18 A, 72 A
Resistance Drain-source Rds (on)
0.19 Ohms
Mounting Style
Through Hole
Package / Case
TO-220 FP
Fall Time
7.5 ns
Gate Charge Qg
36 nC
Power Dissipation
130 W
Rise Time
7.5 ns

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Part Number:
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0
Electrical characteristics
1. Eon including reverse recovery of a SiC diode
8/21
Figure 14. Normalized B
Figure 16. Switching losses vs gate resistance
(norm)
0.92
1.08
1.06
1.04
1.02
0.98
0.96
0.94
1.00
E
V
DS
(μJ)
200
150
100
250
50
-50
0
0
(1)
V
V
-25
I
DD
GS
D
=12A
=400V
=10V
10
0
I
D
25
= 1mA
20
VDSS
50
30
75
vs temperature
100
40
Eon
T
Eoff
J
Doc ID 022865 Rev 2
(°C)
STB20N65M5, STI20N65M5, STP20N65M5, STW20N65M5
AM10399v1
AM15593v1
R
G
(Ω)
Figure 15. Drain-source diode forward
(V)
V
0.6
0.4
0.8
0.2
1.0
1.2
SD
0
0
characteristics
T
J
=150°C
10
T
J
=-50°C
20
30
40
T
J
=25°C
50
I
SD
AM05461v1
(A)

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