MCH6662-TL-H ON Semiconductor, MCH6662-TL-H Datasheet

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MCH6662-TL-H

Manufacturer Part Number
MCH6662-TL-H
Description
MOSFET NCH+NCH 1.8 DRIVE SERIES
Manufacturer
ON Semiconductor
Datasheet

Specifications of MCH6662-TL-H

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
20 V
Continuous Drain Current
2 A
Resistance Drain-source Rds (on)
160 mOhms
Mounting Style
SMD/SMT
Package / Case
MCPH-6
Power Dissipation
0.8 W
Ordering number : EN8999A
MCH6662
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7022A-006
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
ON-resistance Nch : R DS (on)1=120m Ω (typ.)
1.8V drive
Halogen free compliance
Protection diode in
6
1
6
1
0.65
Parameter
2.0
5
2
5
2
4
3
3
4
0.3
0.15
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
0 t o 0.02
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
Symbol
MCH6662-TL-H
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
MCH6662
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Electrical Connection
Conditions
6
1
TL
70412 TKIM/20812PE TKIM TC-00002705
5
2
2
×0.8mm) 1unit
DATA SHEET
4
3
: MCPH6
: SC-88, SC-70-6, SOT-363
Marking
Ratings
XP
--55 to +150
±10
150
2.0
8.0
0.8
20
No.8999-1/7
Unit
°C
°C
W
A
A
V
V

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MCH6662-TL-H Summary of contents

Page 1

... PW≤10μs, duty cycle≤ When mounted on ceramic substrate (900mm Tch Tstg Product & Package Information • Package • JEITA, JEDEC • Minimum Packing Quantity : 3,000 pcs./reel MCH6662-TL-H Packing Type : TL Electrical Connection 6 1 http://semicon.sanyo.com/en/network DATA SHEET Ratings 20 ± ...

Page 2

... I D =1. =10Ω D PW=10μs D.C.≤1% G P.G 50Ω S Ordering Information Device MCH6662-TL-H MCH6662 Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =20V =0V I GSS V GS =±8V = (off =10V =1mA | yfs | V DS =10V = (on ...

Page 3

... Drain Current Time -- I D 1000 100 (on 1 0.01 0.1 1.0 Drain Current MCH6662 2 =10V Ta=25°C 2.0 1.5V 1.5 1.0 0.5 0 0.8 0.9 1.0 0 0.2 IT16372 600 Ta=25°C 500 400 300 200 100 --60 --40 --20 IT16712 ...

Page 4

... Total Gate Charge 1.0 When mounted on ceramic substrate 2 (900mm ×0.8mm) 1unit 0.8 0.6 0.4 0 100 Ambient Temperature °C MCH6662 =8A (PW ≤ 10 μ = Operation in this area is limited (on). 0 Ta=25° Single pulse When mounted on ceramic substrate (900mm 0 ...

Page 5

... Embossed Taping Specifi cation MCH6662-TL-H MCH6662 No.8999-5/7 ...

Page 6

... Outline Drawing MCH6662-TL-H MCH6662 Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 0.4 0.65 0.65 No.8999-6/7 ...

Page 7

... Note on usage : Since the MCH6662 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

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