MCH3479-TL-H ON Semiconductor, MCH3479-TL-H Datasheet

no-image

MCH3479-TL-H

Manufacturer Part Number
MCH3479-TL-H
Description
MOSFET NCH 1.8V DRIVE SERIES
Manufacturer
ON Semiconductor
Datasheet

Specifications of MCH3479-TL-H

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
20 V
Continuous Drain Current
3.5 A
Resistance Drain-source Rds (on)
64 mOhms
Mounting Style
SMD/SMT
Package / Case
MCPH-3
Power Dissipation
0.9 W

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCH3479-TL-H
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
MCH3479-TL-H
Quantity:
3 000
Ordering number : ENA1813A
MCH3479
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7019A-003
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
ON-resistance R DS (on)1=49m Ω (typ.)
1.8V drive
Halogen free compliance
Protection diode in
0.65
Parameter
1
2.0
3
2
0.3
0.15
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
0 t o 0.02
MCH3479-TL-H
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
Symbol
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
MCH3479
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Electrical Connection
Conditions
1
TL
60612 TKIM/81110PE TK IM TC-00002457
3
2
2
×0.8mm)
DATA SHEET
: MCPH3
: SC-70, SOT-323
Marking
FL
Ratings
--55 to +150
±12
150
3.5
0.9
20
14
No. A1813-1/7
Unit
°C
°C
W
A
A
V
V

Related parts for MCH3479-TL-H

MCH3479-TL-H Summary of contents

Page 1

... PW≤10μs, duty cycle≤ When mounted on ceramic substrate (900mm Tch Tstg Product & Package Information • Package • JEITA, JEDEC • Minimum Packing Quantity : 3,000 pcs./reel MCH3479-TL-H Packing Type : TL TL Electrical Connection 1 http://semicon.sanyo.com/en/network 60612 TKIM/81110PE TK IM TC-00002457 DATA SHEET Ratings 20 ± ...

Page 2

... =1. =6.7Ω D PW=10μs D.C.≤1% G P.G 50Ω S Ordering Information Device MCH3479-TL-H MCH3479 Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =20V =0V I GSS V GS =±8V = (off =10V =1mA | yfs | V DS =10V =1. (on ...

Page 3

... Drain Current Time -- =10V =4. 0.1 1.0 Drain Current MCH3479 =10V 0.8 0.9 1.0 0 0.2 IT15111 160 Ta=25 ° C 140 120 100 --60 --40 --20 IT15113 =10V ...

Page 4

... Total Gate Charge 1.0 When mounted on ceramic substrate 2 (900mm ×0.8mm) 0.9 0.8 0.6 0.4 0 100 Ambient Temperature °C MCH3479 1 0 Ta=25° Single pulse When mounted on ceramic substrate (900mm 0. 0.01 IT15119 ...

Page 5

... Taping Specifi cation MCH3479-TL-H MCH3479 No. A1813-5/7 ...

Page 6

... Outline Drawing MCH3479-TL-H MCH3479 Land Pattern Example Mass (g) Unit 0.007 mm * For reference Unit: mm 0.4 0.65 0.65 No. A1813-6/7 ...

Page 7

... Note on usage : Since the MCH3479 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

Related keywords