CPH3356-TL-H ON Semiconductor, CPH3356-TL-H Datasheet

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CPH3356-TL-H

Manufacturer Part Number

CPH3356-TL-H

Description

MOSFET PCH 1.8V DRIVE SERIES

Manufacturer

ON Semiconductor

Datasheet

1.CPH3356-TL-H.pdf (7 pages)

Specifications of CPH3356-TL-H

Rohs

yes

Transistor Polarity

P-Channel

Drain-source Breakdown Voltage

- 20 V

Continuous Drain Current

- 2.5 A

Resistance Drain-source Rds (on)

137 mOhms

Mounting Style

SMD/SMT

Package / Case

SC-59

Power Dissipation

1 W

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Ordering number : ENA1124A

CPH3356

Features

Speciﬁ cations

Absolute Maximum Ratings at Ta=25°C

Package Dimensions

unit : mm (typ)

7015A-004

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

•

•

•

1.8V drive

Halogen free compliance

Protection diode in

1

Parameter

0.95

2.9

3

2

0.4

0.05

0.15

1 : Gate

2 : Source

3 : Drain

SANYO : CPH3

V DSS

V GSS

I D

I DP

P D

Tch

Tstg

Symbol

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

CPH3356-TL-H

http://semicon.sanyo.com/en/network

SANYO Semiconductors

PW≤10μs, duty cycle≤1%

When mounted on ceramic substrate (900mm

CPH3356

Product & Package Information

• Package

• JEITA, JEDEC

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type: TL

Electrical Connection

Conditions

1

61312 TKIM/N3011PE TKIM TC-00002675

TL

3

2

2

×0.8mm)

DATA SHEET

: CPH3

: SC-59, TO-236, SOT-23

Marking

Ratings

--55 to +150

--2.5

--20

±10

--10

150

1.0

No. A1124-1/7

Unit

°C

°C

W

A

A

V

V

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