MCH6448-TL-H ON Semiconductor, MCH6448-TL-H Datasheet

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MCH6448-TL-H

Manufacturer Part Number
MCH6448-TL-H
Description
MOSFET NCH 1.2V DRIVE SERIES
Manufacturer
ON Semiconductor
Datasheet

Specifications of MCH6448-TL-H

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
20 V
Continuous Drain Current
8 A
Resistance Drain-source Rds (on)
22 mOhms
Mounting Style
SMD/SMT
Package / Case
MCPH-6
Power Dissipation
1.5 W
Ordering number : ENA2004A
MCH6448
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7022A-009
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
ON-resistance R DS (on)1=17m Ω (typ.)
1.2V drive
Halogen free compliance
Protection diode in
6
1
6
1
0.65
Parameter
2.0
5
2
5
2
4
3
3
4
0.3
0.15
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : MCPH6
0 t o 0.02
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
Symbol
MCH6448-TL-H
N-Channel Silicon MOSFET
Low-Voltage Driver Switching
Device Applications
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm
MCH6448
Conditions
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Electrical Connection
3
62712 TKIM/20112PE TKIM TC-00002664
TL
2
1, 2, 5, 6
×0.8mm)
DATA SHEET
4
: MCPH6
: SC-88, SC-70-6, SOT-363
Ratings
Marking
--55 to +150
ZX
150
1.5
20
±9
32
No. A2004-1/7
8
Unit
°C
°C
W
A
A
V
V

Related parts for MCH6448-TL-H

MCH6448-TL-H Summary of contents

Page 1

... PW≤10μs, duty cycle≤ When mounted on ceramic substrate (1200mm Tch Tstg Product & Package Information • Package • JEITA, JEDEC • Minimum Packing Quantity : 3,000 pcs./reel MCH6448-TL-H Packing Type : 0.02 Electrical Connection http://semicon.sanyo.com/en/network DATA SHEET Ratings 2 ×0.8mm) ...

Page 2

... =2.5Ω D PW=10μs D.C.≤1% G MCH6448 P.G 50Ω S Ordering Information Device MCH6448-TL-H MCH6448 Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =20V =0V I GSS V GS =±7.2V = (off =10V =1mA | yfs | V DS =10V = (on =4A ...

Page 3

... Drain Current Time -- I D 1000 100 1 0.1 1.0 10 Drain Current MCH6448 =0. 0.8 0.9 1.0 0 0.2 IT16738 120 Ta=25°C 100 --60 --40 --20 IT16740 100 7 ...

Page 4

... Total Gate Charge 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 Ta=25 ° C 0.2 Single pulse 2 When mounted on ceramic substrate (1200mm ×0.8mm 100 Ambient Temperature °C MCH6448 100 1 Operation in this area 3 is limited (on Ta=25 ° C ...

Page 5

... Taping Specifi cation MCH6448-TL-H MCH6448 No. A2004-5/7 ...

Page 6

... Outline Drawing MCH6448-TL-H MCH6448 Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 0.4 0.65 0.65 No. A2004-6/7 ...

Page 7

... Note on usage : Since the MCH6448 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

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