MCH6341-TL-H ON Semiconductor, MCH6341-TL-H Datasheet

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MCH6341-TL-H

Manufacturer Part Number
MCH6341-TL-H
Description
MOSFET PCH 4V DRIVE SERIES
Manufacturer
ON Semiconductor
Datasheet

Specifications of MCH6341-TL-H

Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 30 V
Continuous Drain Current
- 5 A
Resistance Drain-source Rds (on)
59 mOhms
Mounting Style
SMD/SMT
Package / Case
MCPH-6
Power Dissipation
1.5 W
Ordering number : ENA1272A
MCH6341
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7022A-009
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Low ON-resistance
Halogen free compliance
6
1
6
1
0.65
Parameter
2.0
5
2
5
2
4
3
3
4
0.3
0.15
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : MCPH6
0 t o 0.02
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
Symbol
MCH6341-TL-E
MCH6341-TL-H
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm
MCH6341
4V drive
Protection diode in
Conditions
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Electrical Connection
3
62012 TKIM/73008PE TIIM TC-00001516
TL
2
×0.8mm)
1, 2, 5, 6
DATA SHEET
4
: MCPH6
: SC-88, SC-70-6, SOT-363
Ratings
Marking
--55 to +150
YQ
--30
±20
--20
150
1.5
--5
No. A1272-1/7
Unit
°C
°C
W
A
A
V
V

Related parts for MCH6341-TL-H

MCH6341-TL-H Summary of contents

Page 1

... PW≤10μs, duty cycle≤ When mounted on ceramic substrate (1200mm Tch Tstg Product & Package Information • Package • JEITA, JEDEC • Minimum Packing Quantity : 3,000 pcs./reel MCH6341-TL-E MCH6341-TL-H Packing Type : 0.02 Electrical Connection http://semicon.sanyo.com/en/network DATA SHEET Ratings --30 ±20 --5 ...

Page 2

... -- =5Ω D PW=10μs D.C.≤1% G MCH6341 P.G 50Ω S Ordering Information Device MCH6341-TL-E MCH6341-TL-H MCH6341 Symbol Conditions V (BR)DSS I D =--1mA =0V I DSS V DS =--30V =0V I GSS V GS =±16V = (off =--10V =--1mA | yfs | V DS =--10V =--3A ...

Page 3

... Drain Current Time -- --15V --10V 100 --0.1 --1.0 Drain Current MCH6341 -- --10V --5 --4 --3 --2 --1 0 --0.8 --0.9 --1.0 0 --0.5 IT13379 160 Ta=25 ° C 140 120 100 --12 --14 --16 --60 --40 ...

Page 4

... Total Gate Charge 2.0 When mounted on ceramic substrate 2 (1200mm ×0.8mm) 1.8 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature ° C MCH6341 --20A --1 Operation in this 3 2 area is limited (on). --0.1 7 Ta=25 ° Single pulse 3 When mounted on ceramic substrate ...

Page 5

... Taping Specifi cation MCH6341-TL-E, MCH6341-TL-H MCH6341 No. A1272-5/7 ...

Page 6

... Outline Drawing MCH6341-TL-E, MCH6341-TL-H MCH6341 Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 0.4 0.65 0.65 No. A1272-6/7 ...

Page 7

... Note on usage : Since the MCH6341 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

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