EMH2411R-TL-H ON Semiconductor, EMH2411R-TL-H Datasheet

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EMH2411R-TL-H

Manufacturer Part Number
EMH2411R-TL-H
Description
MOSFET NCH+NCH 2.5V DRIVE SERIES
Manufacturer
ON Semiconductor
Datasheet

Specifications of EMH2411R-TL-H

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
5 A
Resistance Drain-source Rds (on)
36.5 mOhms
Mounting Style
SMD/SMT
Package / Case
EMH-8
Power Dissipation
1.4 W
Ordering number : ENA1421A
EMH2411R
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7045-006
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
1
Low ON-resistance
Best suited for LiB charging and discharging switch
Common-drain type
2.5V drive
Halogen free compliance
Protection diode in
8
0.5
0.2
2.0
Parameter
4
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : EMH8
0.125
V DSS
V GSS
I D
I DP
P D
P T
Tch
Tstg
Symbol
EMH2411R-TL-H
http://semicon.sanyo.com/en/network
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
When mounted on ceramic substrate (900mm
EMH2411R
Conditions
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Electrical Connection
8
1
62712 TKIM/52709PE MS IM TC-00001977
7
2
TL
2
×0.8mm) 1unit
6
3
2
×0.8mm)
DATA SHEET
5
4
: EMH8
: -
Marking
Ratings
LL
LOT No.
--55 to +150
±12
150
1.3
1.4
30
60
No. A1421-1/7
5
Unit
°C
°C
W
W
A
A
V
V

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EMH2411R-TL-H Summary of contents

Page 1

... When mounted on ceramic substrate (900mm P T When mounted on ceramic substrate (900mm Tch Tstg Product & Package Information • Package • JEITA, JEDEC • Minimum Packing Quantity : 3,000 pcs./reel EMH2411R-TL-H 0.125 Packing Type : TL Electrical Connection 8 1 http://semicon.sanyo.com/en/network 62712 TKIM/52709PE MS IM TC-00001977 DATA SHEET ...

Page 2

... =3.33Ω D PW=10μs D.C.≤ EMH2411R P.G 50Ω S Rg=2kΩ Ordering Information Device EMH2411R-TL-H EMH2411R Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =30V =0V I GSS V GS =±8V = (off =10V =1mA | yfs | V DS =10V = (on ...

Page 3

... Drain Current Time -- I D 10000 1000 (on 100 0.1 1.0 Drain Current EMH2411R =10V 1. =1.0V 0 0.7 0.8 0.9 1.0 0 IT14423 70 Ta=25° --50 IT14425 =0V ...

Page 4

... Operation in this area 3 is limited (on). 2 0.1 7 Ta=25° Single pulse 3 When mounted on ceramic substrate 2 2 ×0.8mm) 1unit (900mm 0. 0.01 0.1 1.0 Drain-to-Source Voltage EMH2411R 1.6 PW≤10μs 1.4 1.3 1.2 1.0 0.8 0.6 0.4 0 IT14431 100 120 ...

Page 5

... Embossed Taping Specifi cation EMH2411R-TL-H EMH2411R No. A1421-5/7 ...

Page 6

... Outline Drawing EMH2411R-TL-H EMH2411R Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 0.3 0.5 No. A1421-6/7 ...

Page 7

... Note on usage : Since the EMH2411R is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

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