EMH1405-P-TL-H ON Semiconductor, EMH1405-P-TL-H Datasheet

no-image

EMH1405-P-TL-H

Manufacturer Part Number
EMH1405-P-TL-H
Description
MOSFET
Manufacturer
ON Semiconductor
Datasheet

Specifications of EMH1405-P-TL-H

Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
8.5 A
Resistance Drain-source Rds (on)
14 mOhms
Mounting Style
SMD/SMT
Package / Case
EMH-8
Power Dissipation
1.5 W
Ordering number : ENA1667A
EMH1405
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ.)
7045-001
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
1
ON-resistance R DS (on)1=14m Ω (typ)
4V drive
Halogen free compliance
Protection diode in
8
0.5
0.2
2.0
Parameter
4
5
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : EMH8
0.125
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
Symbol
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
EMH1405-TL-H
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm
EMH1405
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Taping Type : TL
Electrical Connection
Conditions
8
1
TL
50112 TKIM/60210PE TK IM TC-00002377
7
2
6
3
2
×0.8mm)
DATA SHEET
5
4
: EMH8
: -
Marking
Ratings
KE
LOT No.
--55 to +150
±20
150
8.5
1.5
30
34
No. A1667-1/7
Unit
°C
°C
W
A
A
V
V

Related parts for EMH1405-P-TL-H

EMH1405-P-TL-H Summary of contents

Page 1

... PW≤10μs, duty cycle≤ When mounted on ceramic substrate (1200mm Tch Tstg Product & Package Information • Package • JEITA, JEDEC • Minimum Packing Quantity : 3,000 pcs./reel EMH1405-TL-H 0.125 Taping Type : TL Electrical Connection 8 1 http://semicon.sanyo.com/en/network DATA SHEET Ratings 2 × ...

Page 2

... =5Ω D PW=10μs D.C.≤1% G EMH1405 P.G 50Ω S Ordering Information Device EMH1405-TL-H EMH1405 Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =30V =0V I GSS V GS =±16V = (off =10V =1mA | yfs | V DS =10V = (on)1 ...

Page 3

... Drain Current Time -- 100 (on 0.1 1.0 Drain Current EMH1405 =2. 0.8 0.9 1.0 0 IT15387 60 Ta=25° --60 --40 --20 IT15389 ...

Page 4

... Total Gate Charge 2.0 When mounted on ceramic substrate 2 1.8 (1200mm ×0.8mm) 1.6 1.5 1.4 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature °C EMH1405 1 0.1 7 Ta=25° Single pulse 3 When mounted on ceramic substrate 2 (1200mm 0. 0.01 ...

Page 5

... Embossed Taping Specifi cation EMH1405-TL-H EMH1405 No. A1667-5/7 ...

Page 6

... Outline Drawing EMH1405-TL-H EMH1405 Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 0.3 0.5 No. A1667-6/7 ...

Page 7

... Note on usage : Since the EMH1405 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

Related keywords