NVMFS5832NLT1G ON Semiconductor, NVMFS5832NLT1G Datasheet
NVMFS5832NLT1G
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NVMFS5832NLT1G Summary of contents
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... CASE 488AA AS STYLE 1 T 260 °C L Device Symbol Value Unit NVMFS5832NLT1G 1.2 °C/W R YJ−mb NVMFS5832NLT3G R 40 qJA †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications oz. Cu pad. ...
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ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Forward Transconductance CHARGES, CAPACITANCES & ...
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V 5.0 V 200 150 100 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.020 0.015 0.010 0.005 0.000 GATE−TO−SOURCE VOLTAGE (V) ...
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C iss 3000 2500 2000 1500 1000 C oss 500 C rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 ...
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Duty Cycle = 0.5 10 0.2 0.1 0.05 1 0.02 0.01 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 TYPICAL CHARACTERISTICS 0.001 0.01 0.1 PULSE TIME (sec) Figure 12. Thermal Response http://onsemi.com 100 1000 ...
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... Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81− ...