SCH1331-P-TL-H ON Semiconductor, SCH1331-P-TL-H Datasheet

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SCH1331-P-TL-H

Manufacturer Part Number
SCH1331-P-TL-H
Description
MOSFET
Manufacturer
ON Semiconductor
Datasheet

Specifications of SCH1331-P-TL-H

Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 12 V
Continuous Drain Current
- 3 A
Resistance Drain-source Rds (on)
84 mOhms
Mounting Style
SMD/SMT
Package / Case
SOT-563
Power Dissipation
1 W

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SCH1331-P-TL-H
Manufacturer:
ON
Quantity:
18 955
Ordering number : ENA1530A
SCH1331
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7028-002
This product is designed to “ESD immunity < 200V*”, so please take care when handling.
* Machine Model
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Low ON-resistance
Ultrahigh-speed switching
1.8V drive
Halogen free compliance
1
6
1.6
5
Parameter
2
0.5
4
3
0.2
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : SCH6
0.2
SCH1331-TL-H
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
Symbol
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
SCH1331
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 5,000 pcs./reel
Packing Type : TL
Electrical Connection
Conditions
3
TL
62712 TKIM/81909PE TKIM TC-00002017
1, 2, 5, 6
4
2
×0.8mm)
DATA SHEET
: SCH6
: SOT-563
Marking
YG
Ratings
--55 to +150
--12
±10
--12
150
- -3
No. A1530-1/7
1
Unit
°C
°C
W
A
A
V
V

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SCH1331-P-TL-H Summary of contents

Page 1

... Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : SCH6 SCH1331 SANYO Semiconductors P-Channel Silicon MOSFET General-Purpose Switching Device Applications Symbol Conditions V DSS V GSS PW≤10μs, duty cycle≤ When mounted on ceramic substrate (900mm Tch Tstg Product & Package Information • ...

Page 2

... --1. =4Ω D PW=10μs D.C.≤1% G SCH1331 P.G 50Ω S Ordering Information Device SCH1331-TL-H SCH1331 Symbol Conditions V (BR)DSS I D =--1mA =0V I DSS V DS =--12V =0V I GSS V GS =±8V = (off =--6V =--1mA | yfs | V DS =--6V =--1. (on =--1.5A =--4. (on =--0 ...

Page 3

... Drain Current Time -- -- --4. 100 --0.01 --0.1 --1.0 Drain Current SCH1331 --4 --3 --2 --1 0 --0.8 --0.9 --1.0 0 IT12598 200 Ta=25°C 150 100 50 0 --6 --8 --60 --40 --20 IT14897 -- -- = --1.0 ...

Page 4

... Total Gate Charge 1.2 When mounted on ceramic substrate 2 (900mm ×0.8mm) 1.0 0.8 0.6 0.4 0 100 Ambient Temperature °C SCH1331 --12A -- -- --1 --0 Ta=25° Single pulse When mounted on ceramic substrate (900mm --0.01 ...

Page 5

... Taping Specifi cation SCH1331-TL-H SCH1331 No. A1530-5/7 ...

Page 6

... Outline Drawing SCH1331-TL-H SCH1331 Land Pattern Example Mass (g) Unit 0.004 mm * For reference Unit: mm 0.3 0.5 0.5 No. A1530-6/7 ...

Page 7

... Note on usage : Since the SCH1331 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

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