MCH6336-P-TL-E ON Semiconductor, MCH6336-P-TL-E Datasheet

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MCH6336-P-TL-E

Manufacturer Part Number
MCH6336-P-TL-E
Description
MOSFET
Manufacturer
ON Semiconductor
Datasheet

Specifications of MCH6336-P-TL-E

Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 12 V
Continuous Drain Current
- 5 A
Resistance Drain-source Rds (on)
43 mOhms
Mounting Style
SMD/SMT
Package / Case
MCPH-3
Power Dissipation
1.5 W

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCH6336-P-TL-E
Manufacturer:
MOLEX
Quantity:
60
Ordering number : ENA0958A
MCH6336
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7022A-009
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Ultrahigh-speed switching
Halogen free compliance
6
1
6
1
0.65
Parameter
2.0
5
2
5
2
4
3
3
4
0.3
0.15
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : MCPH6
0 t o 0.02
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
Symbol
MCH6336-TL-E
MCH6336-TL-H
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (1200mm
MCH6336
1.8V drive
Protection diode in
Conditions
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Electrical Connection
3
61312 TKIM/13008PE TIIM TC-00001168
TL
2
1, 2, 5, 6
×0.8mm)
DATA SHEET
4
: MCPH6
: SC-88, SC-70-6, SOT-363
Marking
Ratings
--55 to +150
YK
--12
±10
--20
150
1.5
--5
No. A0958-1/7
Unit
°C
°C
W
A
A
V
V

Related parts for MCH6336-P-TL-E

MCH6336-P-TL-E Summary of contents

Page 1

... P D When mounted on ceramic substrate (1200mm Tch Tstg Product & Package Information • Package • JEITA, JEDEC • Minimum Packing Quantity : 3,000 pcs./reel MCH6336-TL-E Packing Type : TL MCH6336-TL 0.02 Electrical Connection http://semicon.sanyo.com/en/network DATA SHEET Ratings --12 ±10 --20 2 ×0.8mm) ...

Page 2

... =2Ω D PW=10μs D.C.≤1% G MCH6336 P.G 50Ω S Ordering Information Device MCH6336-TL-E MCH6336-TL-H MCH6336 Symbol Conditions V (BR)DSS I D =--1mA =0V I DSS V DS =--12V =0V I GSS V GS =±8V = (off =--6V =--1mA | yfs | V DS =--6V =-- (on =--3A =--4. (on =--1 ...

Page 3

... Drain Current Time -- I D 1000 100 --0.01 --0.1 --1.0 Drain Current MCH6336 --6 --5 --4 --3 --2 -- --1.0V 0 --0.8 --0.9 --1.0 0 IT12987 120 Ta=25°C 100 --6 --7 --8 --60 --40 IT12989 -- -- ...

Page 4

... Total Gate Charge 1.6 When mounted on ceramic substrate 1.5 ✕0.8mm) 2 (1200mm 1.4 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature °C MCH6336 -- --1 --0 Ta=25° Single pulse 2 When mounted on ceramic substrate (1200mm --0. --0.01 ...

Page 5

... Taping Specifi cation MCH6336-TL-E, MCH6336-TL-H MCH6336 No. A0958-5/7 ...

Page 6

... Outline Drawing MCH6336-TL-E, MCH6336-TL-H MCH6336 Land Pattern Example Mass (g) Unit 0.008 mm * For reference Unit: mm 0.4 0.65 0.65 No. A0958-6/7 ...

Page 7

... Note on usage : Since the MCH6336 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

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