IRF840BPBF Vishay/Siliconix, IRF840BPBF Datasheet

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IRF840BPBF

Manufacturer Part Number
IRF840BPBF
Description
MOSFET 500V 850mOhm@10V 8.7A N-Ch D-SRS
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of IRF840BPBF

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
500 V
Resistance Drain-source Rds (on)
850 mOhms at 10 V
Configuration
Single
Package / Case
TO-220AB-3

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF840BPBF
Manufacturer:
ir
Quantity:
12
Company:
Part Number:
IRF840BPBF
Quantity:
9 500
Company:
Part Number:
IRF840BPBF
Quantity:
70 000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91070
S11-0506-Rev. C, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
DS
DS(on)
g
gs
gd
SD
DD
(Max.) (nC)
(nC)
(V)
(nC)
≤ 8.0 A, dI/dt ≤ 100 A/μs, V
= 50 V, starting T
TO-220AB
(Ω)
D
a
J
= 25 °C, L = 14 mH, R
c
a
a
b
V
DD
GS
≤ V
= 10 V
DS
G
, T
N-Channel MOSFET
J
Single
≤ 150 °C.
500
9.3
63
32
This datasheet is subject to change without notice.
g
= 25 Ω, I
C
D
S
= 25 °C, unless otherwise noted)
Power MOSFET
0.85
V
GS
AS
6-32 or M3 screw
at 10 V
= 8.0 A (see fig. 12).
T
for 10 s
C
= 25 °C
T
T
C
C
TO-220AB
IRF840PbF
SiHF840-E3
IRF840
SiHF840
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
SYMBOL
T
dV/dt
J
V
V
E
E
I
I
P
, T
device
DM
I
AR
DS
GS
AR
D
AS
D
stg
design,
- 55 to + 150
IRF840, SiHF840
LIMIT
300
± 20
500
510
125
8.0
5.1
1.0
8.0
3.5
1.1
32
13
10
low
www.vishay.com/doc?91000
d
Vishay Siliconix
on-resistance
www.vishay.com
lbf · in
UNIT
W/°C
N · m
RoHS*
V/ns
COMPLIANT
mJ
mJ
°C
W
V
V
A
A
Available
and
1

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IRF840BPBF Summary of contents

Page 1

... Simple Drive Requirements 32 Single • Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance ...

Page 2

IRF840, SiHF840 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage ...

Page 3

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted Top 8 6.0 V 5.5 V 5.0 V Bottom 4 µs Pulse Width ...

Page 4

IRF840, SiHF840 Vishay Siliconix 2500 MHz iss 2000 rss oss ds C 1500 1000 C 500 C ...

Page 5

T , Case Temperature (°C) 91070_09 C Fig Maximum Drain Current vs. Case Temperature 0.5 0.2 0.1 0.1 0.05 0.02 0. ...

Page 6

IRF840, SiHF840 Vishay Siliconix Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit 91070_12c Fig. 12c - Maximum Avalanche Energy ...

Page 7

D.U. Driver gate drive D.U.T. l Rever e recovery current D.U.T. V Re-applied voltage Inductor current Note for logic level device Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured ...

Page 8

E Ø b( e(1) Revison: 08-Oct-12 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT TO-220AB A ...

Page 9

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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