CPH3350-TL-H ON Semiconductor, CPH3350-TL-H Datasheet

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CPH3350-TL-H

Manufacturer Part Number
CPH3350-TL-H
Description
MOSFET PCH 1.8V DRIVE SERIES
Manufacturer
ON Semiconductor
Datasheet

Specifications of CPH3350-TL-H

Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 20 V
Continuous Drain Current
- 3 A
Resistance Drain-source Rds (on)
83 mOhms
Mounting Style
SMD/SMT
Package / Case
SC-59
Power Dissipation
1 W
Ordering number : ENA0151A
CPH3350
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7015A-004
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Ultrahigh-speed switching
1.8V drive
Halogen free compliance
Protection diode in
1
Parameter
0.95
2.9
3
2
0.4
0.05
0.15
1 : Gate
2 : Source
3 : Drain
SANYO : CPH3
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
Symbol
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
CPH3350-TL-H
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
CPH3350
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL
Electrical Connection
Conditions
1
60612 TKIM/D1411PE TKIM TC-00002683
TL
3
2
2
×0.8mm)
DATA SHEET
: CPH3
: SC-59, TO-236, SOT-23
Marking
Ratings
--55 to +150
--20
±10
--12
150
1.0
- -3
No. A0151-1/7
Unit
°C
°C
W
A
A
V
V

Related parts for CPH3350-TL-H

CPH3350-TL-H Summary of contents

Page 1

... PW≤10μs, duty cycle≤ When mounted on ceramic substrate (900mm Tch Tstg Product & Package Information • Package • JEITA, JEDEC • Minimum Packing Quantity : 3,000 pcs./reel CPH3350-TL-H Packing Type: TL Electrical Connection 1 http://semicon.sanyo.com/en/network 60612 TKIM/D1411PE TKIM TC-00002683 DATA SHEET Ratings --20 ± ...

Page 2

... --1. =6.67Ω D PW=10μs D.C.≤1% G P.G 50Ω S Ordering Information Device CPH3350-TL-H CPH3350 Symbol Conditions -1mA =0V V (BR)DSS -20V =0V I DSS I GSS V GS =±8V = -10V =--1mA V GS (off -10V =--1.5A | yfs | -1.5A =--4. (on -1A ...

Page 3

... Drain Current Time -- 100 --0.1 --1.0 Drain Current CPH3350 --5 --4 --3 --2 -- --1.0V 0 --0.8 --0.9 --1.0 0 IT13008 250 Ta=25 ° C 200 150 100 50 0 --6 --7 --8 --60 --40 --20 IT13010 -- --10V --1 ...

Page 4

... Total Gate Charge 1.2 When mounted on ceramic substrate 2 ×0.8mm) (900mm 1.0 0.8 0.6 0.4 0 100 Ambient Temperature °C CPH3350 --100 -- --1 Operation in this area 2 is limited (on). --0 Ta=25 ° Single pulse ...

Page 5

... Embossed Taping Specifi cation CPH3350-TL-H CPH3350 No. A0151-5/7 ...

Page 6

... Outline Drawing CPH3350-TL-E CPH3350 Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 0.6 0.95 0.95 No. A0151-6/7 ...

Page 7

... Note on usage : Since the CPH3350 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

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