MCH3478-TL-H ON Semiconductor, MCH3478-TL-H Datasheet

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MCH3478-TL-H

Manufacturer Part Number
MCH3478-TL-H
Description
MOSFET NCH 1.8V DRIVE SERIES
Manufacturer
ON Semiconductor
Datasheet

Specifications of MCH3478-TL-H

Rohs
yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MCH3478-TL-H
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
MCH3478-TL-H
Manufacturer:
ON
Quantity:
7 058
Ordering number : ENA1353A
MCH3478
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7019A-003
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Low ON-resistance
1.8V drive
Protection diode in
0.65
Parameter
1
2.0
3
2
0.3
0.15
1 : Gate
2 : Source
3 : Drain
SANYO : MCPH3
0 t o 0.02
MCH3478-TL-H
V DSS
V GSS
I D
I D
I DP
P D
Tch
Tstg
Symbol
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
SANYO Semiconductors
Duty cycle≤1%
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
When mounted on ceramic substrate (900mm
MCH3478
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Electrical Connection
Ultrahigh speed switching
Halogen free compliance
Conditions
1
TL
60612TKIM/21809PE MSIM TC-00001860
2
×0.8mm), PW=10s
3
2
2
×0.8mm)
DATA SHEET
: MCPH3
: SC-70, SOT-323
Marking
FK
Ratings
--55 to +150
±12
150
2.5
0.8
1.2
30
No. A1353-1/7
2
8
Unit
°C
°C
W
W
A
A
A
V
V

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MCH3478-TL-H Summary of contents

Page 1

... When mounted on ceramic substrate (900mm P D When mounted on ceramic substrate (900mm Tch Tstg Product & Package Information • Package • JEITA, JEDEC • Minimum Packing Quantity : 3,000 pcs./reel MCH3478-TL-H Packing Type : TL TL Electrical Connection 1 http://semicon.sanyo.com/en/network DATA SHEET Ratings 30 ± ...

Page 2

... R L =15Ω OUT D PW=10μs D.C.≤1% G P.G 50Ω MCH3478 S Ordering Information Device MCH3478-TL-H MCH3478 Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =30V =0V I GSS V GS =±8V = (off =10V =1mA | yfs | V DS =10V = (on =1A ...

Page 3

... Drain Current Time -- =15V =4. (on 0.1 1.0 Drain Current MCH3478 2.0 1.8 1.6 1.4 1.2 1.0 1.5V 0.8 0.6 0 =1.2V 0.2 0 0.8 0.9 1.0 0 IT14137 450 Ta=25°C 400 350 300 250 200 150 100 --60 --40 --20 ...

Page 4

... Total Gate Charge 1.4 When mounted on ceramic substrate 2 (900mm ×0.8mm) 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature °C MCH3478 1 0 Ta=25° Single pulse 2 When mounted on ceramic substrate (900mm 0.01 1.6 1.8 2 0.01 IT14145 120 140 160 ...

Page 5

... Taping Specifi cation MCH3478-TL-H MCH3478 No. A1353-5/7 ...

Page 6

... Outline Drawing MCH3478-TL-H MCH3478 Land Pattern Example Mass (g) Unit 0.007 mm * For reference Unit: mm 0.4 0.65 0.65 No. A1353-6/7 ...

Page 7

... Note on usage : Since the MCH3478 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

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