IRF9383MTRPBF International Rectifier, IRF9383MTRPBF Datasheet

IRF9383MTRPBF

Manufacturer Part Number

IRF9383MTRPBF

Description

MOSFET MOSFET P-Channel 2.9 mOhm -30V -160A

Manufacturer

International Rectifier

Datasheet

1.IRF9383MTR1PBF.pdf (9 pages)

Specifications of IRF9383MTRPBF

Rohs

yes

Transistor Polarity

P-Channel

Drain-source Breakdown Voltage

- 30 V

Continuous Drain Current

- 22 A

Resistance Drain-source Rds (on)

2.32 mOhms

Mounting Style

SMD/SMT

Package / Case

SOIC-8

Power Dissipation

2.1 W

Factory Pack Quantity

4800

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Applications

‚

Features and Benefits

Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)

Description

The IRF9383MTRPbF combines the latest HEXFET

packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET

package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or

convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The

DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance

by 80%.

Orderable part number

IRF9383MTRPbF

IRF9383MTR1PbF

www.irf.com

Absolute Maximum Ratings

Isolation Switch for Input Power or Battery Application

High Side Switch for Inverter Applications

Environmentaly Friendly Product

RoHs Compliant Containing no Lead,

no Bromide and no Halogen

Common-Drain P-Channel MOSFETs Provides

High Level of Integration and Very Low RDS(on)

Click on this section to link to the appropriate technical paper.

Click on this section to link to the DirectFET Website.

Surface mounted on 1 in. square Cu board, steady state.

@ T

Fig 1. Typical On-Resistance vs. Gate Voltage

= 25°C

= 70°C

= 25°C

-V GS, Gate -to -Source Voltage (V)

Drain-to-Source Voltage

Gate-to-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

T J = 25°C

DirectFET Medium Can

T J = 125°C

Package Type

I D = -22A

Parameter

P-Channel Power MOSFET Silicon technology with the advanced DirectFET

@ 10V

„

…

-30V max ±20V max 2.3m@-10V 3.8m@-4.5V

Tape and Reel

67nC

Repetitive rating; pulse width limited by max. junction temperature.

g tot

DirectFET

DSS

measured with thermocouple mounted to top (Drain) of part.

14.0

12.0

10.0

Form

Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage

8.0

6.0

4.0

2.0

0.0

Standard Pack

29nC

I D = -18A

P-Channel Power MOSFET ‚

IRF9383MTRPbF

Q G Total Gate Charge (nC)

9.4nC

V DS = -24V

V DS = -15V

V DS = -6.0V

gs2

Quantity

IRF9383MPbF

4800

1000

Max.

-160

-180

-30

±20

-22

-17

DS(on)

315nC

100 120 140 160 180

DirectFET™ ISOMETRIC

59nC

oss

Note

DS(on)

Units

08/16/11

-1.8V

gs(th)

Related parts for IRF9383MTRPBF

IRF9383MTRPBF Summary of contents

Page 1

... ST Description The IRF9383MTRPbF combines the latest HEXFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes ...

Page 2

Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS V /T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) V /T Gate Threshold Voltage Coefficient GS(th) ...

Page 3

Absolute Maximum Ratings 25°C Power Dissipation D A Power Dissipation 70° 25°C Power Dissipation D C Peak Soldering Temperature Operating Junction and J T Storage Temperature ...

Page 4

PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 -15V 60μs PULSE WIDTH 100 10 1 ...

Page 5

150° 25° -40° 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1 Source-to-Drain Voltage (V) Fig 10. Typical Source-Drain Diode Forward ...

Page 6

DUT 0 1K 20K S S Fig 17a. Gate Charge Test Circuit D.U DRIVER -V -20V GS 0.01  Fig 18a. Unclamped Inductive Test Circuit   Fig 19a. Switching Time ...

Page 7

... D.U. Reverse „ Recovery Current + D.U. Re-Applied + Voltage - Inductor Curent for P-Channel HEXFET P.W. Period D = Period V Waveform Body Diode Forward Current di/dt Waveform Diode Recovery dv/dt V Body Diode Forward Drop I Ripple  ® Power MOSFETs G=GATE D=DRAIN S=SOURCE D D =10V ...

Page 8

Dimensions are shown in millimeters (inches) ® 8 GATE MARKING LOGO PART NUMBER BATCH NUMBER DATE CODE Line above the last character of the date code indicates "Lead-Free" DIMENSIONS METRIC IMPERIAL CODE MIN MAX MIN MAX A 6.25 6.35 ...

Page 9

... Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF9383MTRPBF). For 1000 parts on 7" reel, order IRF9383MTR1PBF IMPERIAL STANDARD OPTION (QTY 4800) ...

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