FDD8870_F085 Fairchild Semiconductor, FDD8870_F085 Datasheet

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FDD8870_F085

Manufacturer Part Number
FDD8870_F085
Description
MOSFET 30V NCH PwrTrench
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDD8870_F085

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Continuous Drain Current
21 A
Resistance Drain-source Rds (on)
3.9 mOhms
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-252AA
Minimum Operating Temperature
- 55 C
Power Dissipation
160 W
Factory Pack Quantity
2500
©2013 Fairchild Semiconductor Corporation
FDD8870_F085
N-Channel PowerTrench
30V, 160A, 3.9mΩ
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
r
Applications
• DC/DC converters
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
E
P
T
R
R
R
DS(ON)
D
GS
J
DSS
AS
D
θJC
θJA
θJA
Symbol
, T
STG
and fast switching speed.
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Continuous (T
Pulsed
Single Pulse Avalanche Energy (Note 2)
Power dissipation
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case TO-252
Thermal Resistance Junction to Ambient TO-252
Thermal Resistance Junction to Ambient TO-252, 1in
amb
C
C
= 25
= 25
o
C
= 25
o
o
C, V
C, V
o
C, V
®
GS
GS
G
MOSFET
GS
= 10V) (Note 1)
= 4.5V) (Note 1)
Parameter
S
T
= 10V, with R
C
= 25°C unless otherwise noted
(TO-252)
D-PAK
TO-252
θJA
= 52
D
Features
• r
• r
• High performance trench technology for extremely low
• Low gate charge
• High power and current handling capability
• Qualified to AEC Q101
• RoHS Compliant
r
DS(ON)
DS(ON)
DS(ON)
o
2
C/W)
copper pad area
= 3.9mΩ , V
= 4.4mΩ , V
GS
GS
= 10V, I
= 4.5V, I
-55 to 175
Ratings
Figure 4
D
D
G
1.07
= 35A
160
150
690
160
0.94
±20
100
= 35A
30
21
52
D
S
Jan 2013
FDD8870_F085 Rev. C1
Units
W/
o
o
o
C/W
C/W
C/W
mJ
o
W
V
A
V
A
A
A
C
o
C

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FDD8870_F085 Summary of contents

Page 1

... 4.5V) (Note 10V, with C/W) θ copper pad area Jan 2013 = 10V 35A 4.5V 35A Ratings Units 30 V ±20 V 160 A 150 Figure 4 A 690 mJ 160 -55 to 175 C o 0.94 C/W o 100 C C/W FDD8870_F085 Rev. C1 ...

Page 2

... 250 C ±100 - - 1.2 - 2.5 - 0.0032 0.0039 - 0.0036 0.0044 - 0.0051 0.0063 - 5160 - - 990 - - 590 - - 2 118 - 15V 6.5 = 35A - 1.0mA - 139 - 189 - - 1. 1 FDD8870_F085 Rev. C1 Units V μ Ω Ω ...

Page 3

... Case Temperature NOTES: DUTY FACTOR PEAK θJC θ FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - FDD8870_F085 Rev. C1 175 ...

Page 4

... TIME IN AVALANCHE (ms) AV Capability 10V 2. PULSE DURATION = 80μs DUTY CYCLE = 0.5% MAX 0.2 0 DRAIN TO SOURCE VOLTAGE ( 10V - 120 160 JUNCTION TEMPERATURE ( C) J FDD8870_F085 Rev. C1 100 = 0.6 = 35A D 200 ...

Page 5

... OSS Figure 14. Gate Charge Waveforms for Constant I = 250μ 120 160 JUNCTION TEMPERATURE ( 15V DD WAVEFORMS IN DESCENDING ORDER 35A GATE CHARGE (nC) g Gate Current FDD8870_F085 Rev. C1 200 100 ...

Page 6

... Figure 18. Gate Charge Waveforms d(ON 90 DUT V GS 50% 10% 0 Figure 20. Switching Time Waveforms BV DSS g(TOT g( g(TH OFF t d(OFF 10% 10% 90% 50% PULSE WIDTH FDD8870_F085 Rev 10V 90% ...

Page 7

... C/W) θJA is never exceeded (EQ 0.01 (0.0645 Figure 21. Thermal Resistance vs Mounting dissipation. Pulse (EQ. 2) Area in Inches Squared (EQ. 3) Area in Centimeters Squared R = 33.32+ 23.84/(0.268+Area) EQ.2 θ 33.32+ 154/(1.73+Area) EQ.3 θJA 0 (0.645) (6.45) (64. AREA, TOP COPPER AREA in (cm ) Pad Area FDD8870_F085 Rev. C1 ...

Page 8

... S1A S2A S1B S2B EGS EDS LDRAIN DRAIN RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN EBREAK MWEAK MMED LSOURCE SOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT + 8 22 RVTHRES FDD8870_F085 Rev ...

Page 9

... CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 51 ISCL DBREAK 50 RDRAIN 11 DBODY MWEAK EBREAK MMED + MSTRO 17 18 LSOURCE - 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES FDD8870_F085 Rev. C1 DRAIN 2 SOURCE 3 ...

Page 10

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE FDD8870_F085 Rev. C1 ...

Page 11

... TinyBuck™ TinyCalc™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ ® TranSiC TriFault Detect™ ® TRUECURRENT * μSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™ Definition Rev. I61 FDD8870_F085 Rev. C1 ...

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