ECH8420-TL-H ON Semiconductor, ECH8420-TL-H Datasheet

no-image

ECH8420-TL-H

Manufacturer Part Number
ECH8420-TL-H
Description
MOSFET NCH 1.8V DRIVE SERIES
Manufacturer
ON Semiconductor
Datasheet

Specifications of ECH8420-TL-H

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
20 V
Continuous Drain Current
14 A
Resistance Drain-source Rds (on)
6.8 mOhms
Mounting Style
SMD/SMT
Package / Case
ECH-8
Power Dissipation
1.6 W

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ECH8420-TL-H
Quantity:
5 000
Ordering number : EN8993A
ECH8420
Features
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm (typ)
7011A-002
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
ON-resistance R DS (on)1=5.2m Ω (typ.)
1.8V drive.
Halogen free compliance.
Protection diode in
1
8
0.65
Bot t om View
Parameter
Top View
2.9
5
4
0.3
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
SANYO : ECH8
0.15
V DSS
V GSS
I D
I DP
P D
Tch
Tstg
0 t o 0.02
Symbol
ECH8420-TL-H
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
SANYO Semiconductors
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
ECH8420
Product & Package Information
• Package
• JEITA, JEDEC
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Electrical Connection
Conditions
TL
8
1
71112 TKIM/O1911PE TKIM TC-00002660
7
2
2
×0.8mm)
DATA SHEET
6
3
: ECH8
: -
5
4
Marking
Ratings
--55 to +150
ZA
Lot No.
±12
150
1.6
20
14
50
No.8993-1/7
Unit
°C
°C
W
A
A
V
V

Related parts for ECH8420-TL-H

ECH8420-TL-H Summary of contents

Page 1

... PW≤10μs, duty cycle≤ When mounted on ceramic substrate (900mm Tch Tstg Product & Package Information • Package • JEITA, JEDEC • Minimum Packing Quantity : 3,000 pcs./reel ECH8420-TL-H Packing Type : 0.02 TL Electrical Connection 8 1 http://semicon.sanyo.com/en/network DATA SHEET ...

Page 2

... =1.43Ω D PW=10μs D.C.≤1% G P.G 50Ω S Ordering Information Device ECH8420-TL-H ECH8420 Symbol Conditions V (BR)DSS I D =1mA =0V I DSS V DS =20V =0V I GSS V GS =±8V = (off =10V =1mA | yfs | V DS =10V = (on =7A ...

Page 3

... Drain Current Time -- I D 1000 100 (on 0.1 1.0 10 Drain Current ECH8420 =10V 0.8 0.9 1.0 0 0.2 IT16625 25 Ta=25 ° ...

Page 4

... Total Gate Charge 1.8 When mounted on ceramic substrate 2 (900mm ×0.8mm) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 100 Ambient Temperature °C ECH8420 100 1.0 7 Operation in this 5 area is limited (on 0 Ta=25° Single pulse 2 When mounted on ceramic substrate (900mm ...

Page 5

... Embossed Taping Specifi cation ECH8420-TL-H ECH8420 No.8993-5/7 ...

Page 6

... Outline Drawing ECH8420-TL-H ECH8420 Land Pattern Example Mass (g) Unit 0. For reference 0.65 Unit: mm 0.4 No.8993-6/7 ...

Page 7

... Note on usage : Since the ECH8420 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any " ...

Related keywords