IRFH7004TRPBF International Rectifier, IRFH7004TRPBF Datasheet

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IRFH7004TRPBF

Manufacturer Part Number
IRFH7004TRPBF
Description
MOSFET 40V 100A 1.4mOhm HEXFET 156W 134nC
Manufacturer
International Rectifier
Datasheet

Specifications of IRFH7004TRPBF

Rohs
yes
Tradename
StrongIRFET

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www.irf.com
Applications
l
l
l
l
l
l
l
l
l
Benefits
l
l
l
l
Orderable part number
Ordering Information
Half-bridge and full-bridge topologies
RoHS Compliant containing no Lead, no Bromide,
Brushed Motor drive applications
BLDC Motor drive applications
Synchronous rectifier applications
Resonant mode power supplies
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
Enhanced body diode dV/dt and dI/dt Capability
and no Halogen
Battery powered circuits
OR-ing and redundant power switches
SOA
DC/DC and AC/DC converters
DC/AC Inverters
Fig 1. Typical On-Resistance vs. Gate Voltage
IRFH7004TR2PBF
IRFH7004TRPBF
6.0
4.0
2.0
0.0
4
6
V GS, Gate -to -Source Voltage (V)
8
T J = 25°C
10
Package Type
PQFN 5mm x 6mm
PQFN 5mm x 6mm
T J = 125°C
12
14
I D = 100A
16
18
20
Tape and Reel
Tape and Reel
Form
Fig 2. Maximum Drain Current vs. Case Temperature
Standard Pack
300
250
200
150
100
50
0
25
50
V
R
I
I
T C , Case Temperature (°C)
D (Silicon Limited)
D (Package Limited)
DSS
Quantity
DS(on)
PQFN 5X6 mm
StrongIRFET™
4000
400
HEXFET Power MOSFET
75
max.
typ.
Limited By Package
100
Note
125
259A
1.1m
1.4m
100A
40V
150
05/07/12
1

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IRFH7004TRPBF Summary of contents

Page 1

... Ruggedness Fully Characterized Capacitance and Avalanche l SOA Enhanced body diode dV/dt and dI/dt Capability l RoHS Compliant containing no Lead, no Bromide, l and no Halogen Ordering Information Orderable part number Package Type IRFH7004TRPBF PQFN 5mm x 6mm IRFH7004TR2PBF PQFN 5mm x 6mm 6.0 4 125°C 2 25°C 0 ...

Page 2

Absolute Maximum Ratings Symbol 25°C Continuous Drain Current 100°C Continuous Drain Current 25°C Continuous Drain Current Pulsed Drain ...

Page 3

Dynamic @ T = 25°C (unless otherwise specified) J Symbol Parameter gfs Forward Transconductance Q Total Gate Charge g Q Gate-to-Source Charge gs Q Gate-to-Drain ("Miller") Charge gd Q Total Gate Charge Sync. (Q sync t Turn-On Delay Time d(on) ...

Page 4

PULSE WIDTH 4.25V Tj = 25° Drain-to-Source Voltage (V) Fig 3. Typical Output Characteristics 10000 1000 150°C 100 25° ...

Page 5

150°C 100 25°C 10 1.0 0.0 0.5 1 Source-to-Drain Voltage (V) Fig 9. Typical Source-Drain Diode Forward Voltage 1.0mA ...

Page 6

D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 100 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming  ...

Page 7

150μ 1.0mA 2 1.0A 1.0 -75 -50 - Temperature ( °C ) Fig 17. Threshold Voltage vs. Temperature 100A V ...

Page 8

... Fig 24a. Gate Charge Test Circuit 8 Driver Gate Drive   D.U.T. I Reverse Recovery „ Current - + D.U.T. V Re-Applied G + Voltage - Inductor Curent ® HEXFET Power MOSFETs 15V DRIVER + Fig 22b. Unclamped Inductive Waveforms D.U. P.W. ...

Page 9

PQFN 5x6 Outline "B" Package Details http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "B" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER www.irf.com XXXX PART NUMBER (“ digits”) XYWWX MARKING CODE (Per Marking ...

Page 10

PQFN 5x6 Outline "B" Tape and Reel † Qualification information Qualification level Moisture Sensitivity Level RoHS compliant IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 10 Indus trial (per ...

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