CWDM305P TR13 Central Semiconductor, CWDM305P TR13 Datasheet

CWDM305P TR13

Manufacturer Part Number

CWDM305P TR13

Description

MOSFET SMD Small Sig Mosfet P-Channel Enh Mode

Manufacturer

Central Semiconductor

Datasheet

1.CWDM305P_TR13.pdf (2 pages)

Specifications of CWDM305P TR13

Rohs

yes

Transistor Polarity

P-Channel

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

16 V

Continuous Drain Current

5.3 A

Resistance Drain-source Rds (on)

83 mOhms

Configuration

Single

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOIC-8

Forward Transconductance Gfs (max / Min)

11 S

Gate Charge Qg

7 nC

Minimum Operating Temperature

- 55 C

Power Dissipation

2 W

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APPLICATIONS:

•

MAXIMUM RATINGS: (T A =25°C)

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (Steady State)

Maximum Pulsed Drain Current, tp=10μs

Power Dissipation

Operating and Storage Junction Temperature

Thermal Resistance

ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)

SYMBOL

I GSSF , I GSSR

I DSS

BV DSS

V GS(th)

r DS(ON)

g FS

C rss

C iss

C oss

Q g(tot)

Q gs

Q gd

t on

t off

Load/Power switches

Power supply converter circuits

Battery powered portable equipment

ENHANCEMENT-MODE

SURFACE MOUNT

SILICON MOSFET

SOIC-8 CASE

P-CHANNEL

CWDM305P

TEST CONDITIONS

V GS =20V, V DS =0

V DS =30V, V GS =0

V GS =0, I D =250μA

V GS =V DS , I D =250μA

V GS =10V, I D =2.7A

V GS =5.0V, I D =2.7A

V DS =5.0V, I D =5.3A

V DS =10V, V GS =0, f=1.0MHz

V DD =15V, V GS =5.0V, I D =5.3A

V DD =15V, I D =5.3A, R G =10Ω

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CWDM305P is

a high current P-channel enhancement-mode silicon

MOSFET, manufactured by the P-channel DMOS

process, and is designed for high speed pulsed

amplifier and driver applications. This MOSFET offers

high current, low r DS(ON) , low threshold voltage, and

low leakage current.

MARKING CODE: C503P

FEATURES:

•

SYMBOL

T J , T stg

Low r DS(ON) (83mΩ MAX @ V GS =5.0V)

High current (I D =5.3A)

V GS

V DS

I DM

Θ JA

MIN

P D

1.0

I D

0.066

0.077

TYP

500

4.7

1.4

1.7

7.0

8.0

-55 to +150

21.2

62.5

5.3

2.0

0.072

0.083

MAX

100

590

150

1.0

3.0

7.0

2.1

2.5

w w w. c e n t r a l s e m i . c o m

R4 (23-August 2012)

UNITS

°C/W

μA

°C

Related parts for CWDM305P TR13

CWDM305P TR13 Summary of contents

Page 1

... V DD =15V =5.3A =10Ω DESCRIPTION: The CENTRAL SEMICONDUCTOR CWDM305P is a high current P-channel enhancement-mode silicon MOSFET, manufactured by the P-channel DMOS process, and is designed for high speed pulsed amplifier and driver applications. This MOSFET offers high current, low r DS(ON) , low threshold voltage, and low leakage current ...

Page 2

CWDM305P SURFACE MOUNT P-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOIC-8 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Source 2) Source 3) Source 4) Gate MARKING CODE: C503P ...

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