SPB80N06S08 Infineon Technologies

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SPB80N06S08

Manufacturer Part Number

SPB80N06S08

Description

MOSFET

Manufacturer

Infineon Technologies

Specifications of SPB80N06S08

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

80 A

Resistance Drain-source Rds (on)

8 mOhms

Configuration

Single

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Package / Case

TO-263

Fall Time

32 ns

Forward Transconductance Gfs (max / Min)

73 S

Minimum Operating Temperature

- 55 C

Power Dissipation

300 W

Rise Time

53 ns

Factory Pack Quantity

1000

Typical Turn-off Delay Time

54 ns

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