IRFR9024NTR International Rectifier, IRFR9024NTR Datasheet - Page 2

• Manufacturer Part Number: IRFR9024NTR
• Description: MOSFET MOSFET, P-CHANNEL, -55V, 11A, 175 mOhm, 12.7 nC Qg, D-Pak
• Manufacturer: International Rectifier

Specifications of IRFR9024NTR

• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11 A
• Resistance Drain-source Rds (on): 175 mOhms
• Configuration: Single
• Package / Case: DPAK
• Minimum Operating Temperature: - 55 C
• Power Dissipation: 38 W
• Typical Turn-off Delay Time: 23 ns

IRFR/U9024N
Notes:
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
I
I
V
t
Q
t
I
I
V
R
V
g
Q
Q
Q
t
t
t
t
L
C
C
C
L
SM
on
DSS
GSS
S
rr
d(on)
d(off)
f
r
V
fs
S
SD
D
rr
(BR)DSS
DS(on)
GS(th)
g
gd
iss
oss
rss
Starting T
gs
Repetitive rating; pulse width limited by
R
I
T
max. junction temperature. ( See fig. 11 )
(BR)DSS
SD
J
For recommended footprint and soldering techniques refer to application note #AN-994
G
= 25 , I
150°C
-6.6A, di/dt
/ T
J
J
= 25°C, L = 2.8mH
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
AS
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Internal Drain Inductance
Internal Source Inductance
= -6.6A. (See Figure 12)
240A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
lead and center of die contact
This is applied for I-PAK, L
Pulse width
-2.0
Min. Typ. Max. Units
Uses IRF9Z24N data and test conditions.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
-55
2.5
–––
–––
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
-0.05 –––
–––
–––
–––
–––
–––
––– 0.175
–––
–––
––– -250
–––
––– -100
–––
–––
–––
350
170
47
84
4.5
13
55
23
37
92
7.5
-1.6
130
-4.0
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
–––
-44
-11
-25
5.1
71
300µs; duty cycle
19
10
V/°C
nC
ns
µA
nA
ns
nH
nC
pF
V
A
V
V
S
S
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
integral reverse
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
D
D
of D-PAK is measured between
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 25°C, I
= -7.2A
= -7.2A
= 25°C, I
= 24
= 3.7
= V
= -44V, V
= 0V, I
= -10V, I
= -25V, I
= -55V, V
= -44V
= -10V, See Fig. 6 and 13
= -25V
= 20V
= -20V
= 0V
= -28V
2%.
GS
, I
D
See Fig. 10
S
F
D
Conditions
= -7.2A
= -7.2A, V
= -250µA
D
D
Conditions
GS
= -250µA
GS
= -6.6A
= -7.2A
= 0V, T
= 0V
D
= -1mA
GS
J
G
= 150°C
= 0V
G
S
+L
D
S
D
)
S
D