IPP100N08S207 Infineon Technologies

no-image

IPP100N08S207

Manufacturer Part Number

IPP100N08S207

Description

MOSFET MOSFET

Manufacturer

Infineon Technologies

Specifications of IPP100N08S207

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

75 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

100 A

Resistance Drain-source Rds (on)

0.0071 Ohms

Configuration

Single

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Package / Case

TO-220AB

Fall Time

30 ns

Minimum Operating Temperature

- 55 C

Power Dissipation

300 W

Rise Time

51 ns

Typical Turn-off Delay Time

61 ns

Related parts for IPP100N08S207

Related keywords

IPP100N08S207 component
IPP100N08S207 part
IPP100N08S207 distributor
IPP100N08S207 RoHS