IPP100N04S303 Infineon Technologies
IPP100N04S303
Manufacturer Part Number
IPP100N04S303
Description
MOSFET
Manufacturer
Infineon Technologies
Specifications of IPP100N04S303
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Resistance Drain-source Rds (on)
3.3 mOhms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Fall Time
17 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
214 W
Rise Time
16 ns
Factory Pack Quantity
500
Typical Turn-off Delay Time
46 ns