IPP100N06S2L05 Infineon Technologies

no-image

IPP100N06S2L05

Manufacturer Part Number

IPP100N06S2L05

Description

MOSFET MOSFET

Manufacturer

Infineon Technologies

Specifications of IPP100N06S2L05

Transistor Polarity

N-Channel

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

100 A

Resistance Drain-source Rds (on)

4.4 mOhms

Configuration

Single

Maximum Operating Temperature

+ 175 C

Mounting Style

Through Hole

Package / Case

TO-220

Fall Time

24 ns

Minimum Operating Temperature

- 55 C

Power Dissipation

300 W

Rise Time

25 ns

Typical Turn-off Delay Time

98 ns

Related parts for IPP100N06S2L05

Related keywords

IPP100N06S2L05 component
IPP100N06S2L05 part
IPP100N06S2L05 distributor
IPP100N06S2L05 RoHS