BSS192 /T3 NXP Semiconductors, BSS192 /T3 Datasheet

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BSS192 /T3

Manufacturer Part Number
BSS192 /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet
1.BSS192_T3.pdf (12 pages)

Specifications of BSS192 /T3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
240 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.2 A
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-89
Fall Time
18 ns
Minimum Operating Temperature
- 65 C
Power Dissipation
1000 mW
Rise Time
18 ns
Factory Pack Quantity
4000
Part # Aliases
BSS192,135
Product specification
Supersedes data of 1997 Jun 20
book, halfpage
DATA SHEET
BSS192
P-channel enhancement mode
vertical D-MOS transistor
DISCRETE SEMICONDUCTORS
M3D109
2002 May 22

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BSS192 /T3 Summary of contents

Page 1

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage BSS192 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1997 Jun 20 M3D109 2002 May 22 ...

Page 2

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS Line current interrupter in telephone sets Relay, high-speed and line transformer drivers. DESCRIPTION P-channel enhancement mode vertical D-MOS transistor ...

Page 3

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V drain-source voltage (DC gate-source voltage (DC) GSO I drain current (DC peak drain ...

Page 4

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor handbook, halfpage Fig.2 Switching times test circuit. 1.2 handbook, halfpage P tot (W) 0.8 0 100 0 Fig.4 Power derating curve. 2002 May 22 handbook, ...

Page 5

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor 1 handbook, halfpage ( ( ( (1) V ...

Page 6

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor 2.5 handbook, halfpage k 2 1 DSon ---------------------------------------- - DSon I = 200 mA ...

Page 7

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads w M DIMENSIONS (mm are the original dimensions) UNIT 1.6 0.48 ...

Page 8

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor DATA SHEET STATUS PRODUCT (1) DATA SHEET STATUS STATUS Objective data Development Preliminary data Qualification Product data Production Notes 1. Please consult the most recently issued data sheet before initiating or completing ...

Page 9

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor 2002 May 22 NOTES 9 Product specification BSS192 ...

Page 10

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor 2002 May 22 NOTES 10 Product specification BSS192 ...

Page 11

Philips Semiconductors P-channel enhancement mode vertical D-MOS transistor 2002 May 22 NOTES 11 Product specification BSS192 ...

Page 12

Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com. © Koninklijke Philips Electronics N.V. 2002 All rights are reserved. Reproduction in whole or in part is prohibited ...

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