VS-25TTS08SPBF Vishay Semiconductors, VS-25TTS08SPBF Datasheet

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VS-25TTS08SPBF

Manufacturer Part Number
VS-25TTS08SPBF
Description
SCRs 800 Volt 25 Amp
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-25TTS08SPBF

Product Category
SCRs
Rohs
yes
Breakover Current Ibo Max
350 A
Rated Repetitive Off-state Voltage Vdrm
800 V
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Forward Voltage Drop
1.25 V
Gate Trigger Voltage (vgt)
2 V
Maximum Gate Peak Inverse Voltage
10 V
Gate Trigger Current (igt)
45 mA
Holding Current (ih Max)
100 mA
Mounting Style
SMD/SMT
Package / Case
D2PAK
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Factory Pack Quantity
1000
Note
• T
Document Number: 94383
Revision: 09-Jun-10
PRODUCT SUMMARY
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz. (140 μm) copper
Aluminum IMS, R
Aluminum IMS with heatsink, R
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
I
V
I
V
dV/dt
dI/dt
T
VOLTAGE RATINGS
PART NUMBER
VS-25TTS08SPbF
VS-25TTS12SPbF
VS-25TTS16SPbF
T(AV)
RMS
TSM
J
RRM
T
A
= 55 °C, T
/V
DRM
V
T
V
at 16 A
I
TSM
RRM
J
= 125 °C, footprint 300 mm
thCA
D
2
PAK
Surface Mountable Phase Control SCR, 16 A
= 15 °C/W
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
thCA
Sinusoidal waveform
16 A, T
= 5 °C/W
Cathode
Anode
800 V to 1600 V
V
TEST CONDITIONS
RRM
2
1
REVERSE VOLTAGE
J
2
< 1.25 V
= 25 °C
300 A
Gate
3
, MAXIMUM PEAK
SINGLE-PHASE BRIDGE
1200
1600
800
V
VS-25TTS...SPbF High Voltage Series
16.5
3.5
8.5
FEATURES
• Meets MSL level 1, per J-STD-020, LF
• Compliant to RoHS directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21
• Designed and qualified for industrial level
APPLICATIONS
• Input rectification (soft start)
• Vishay input diodes, switches and output rectifiers which
DESCRIPTION
The VS-25TTS...SPbF High Voltage Series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
maximum peak of 260 °C
definition
are available in identical package outlines
800 to 1600
V
- 40 to 125
DRM
VALUES
DIRECT VOLTAGE
THREE-PHASE BRIDGE
DiodesEurope@vishay.com
1.25
300
500
150
16
25
, MAXIMUM PEAK
1200
1600
800
V
13.5
25.0
5.5
Vishay Semiconductors
UNITS
A/μs
V/μs
°C
I
AT 125 °C
A
V
A
V
RRM
UNITS
www.vishay.com
mA
10
A
/I
DRM
,
1

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VS-25TTS08SPBF Summary of contents

Page 1

... TSM dV/dt dI/ VOLTAGE RATINGS PART NUMBER VS-25TTS08SPbF VS-25TTS12SPbF VS-25TTS16SPbF Document Number: 94383 For technical questions within your region, please contact one of the following: Revision: 09-Jun-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, VS-25TTS...SPbF High Voltage Series FEATURES Anode • Meets MSL level 1, per J-STD-020 maximum peak of 260 ° ...

Page 2

... VS-25TTS...SPbF High Voltage Series Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current Maximum RMS on-state current Maximum peak, one-cycle, non-repetitive surge current 2 Maximum I t for fusing √t for fusing 2 Maximum I Maximum on-state voltage drop On-state slope resistance Threshold voltage ...

Page 3

... Average On-sta te Current (A) Fig Current Rating Characteristics Document Number: 94383 For technical questions within your region, please contact one of the following: Revision: 09-Jun-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, VS-25TTS...SPbF High Voltage Series Surface Mountable Phase Control SCR SYMBOL TEST CONDITIONS ...

Page 4

... VS-25TTS...SPbF High Voltage Series Vishay Semiconductors 25 180° 120° 90° 20 60° 30° 15 RMS Limit 10 Conduc tion Angle 125° Avera ge On-state Current (A) Fig On-State Power Loss Characteristics 35 DC 180° 30 120° 90° 25 60° ...

Page 5

... VGD IGD 0.1 0.001 Document Number: 94383 For technical questions within your region, please contact one of the following: Revision: 09-Jun-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, VS-25TTS...SPbF High Voltage Series Surface Mountable Phase Control SCR ingle Pulse 0.001 0.01 0.1 S quare Wave Pulse Duration (s) Fig Gate Characteristics ...

Page 6

... VS-25TTS...SPbF High Voltage Series Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS Dimensions Part marking information Packaging information www.vishay.com For technical questions within your region, please contact one of the following: 6 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, Surface Mountable Phase Control SCR ...

Page 7

... E 9.65 0.039 E1 7.90 0.035 4 e 0.070 H 14.61 0.068 4 L 1.78 0.029 L1 0.023 4 L2 1.27 0.065 L3 0.380 2 L4 4.78 DiodesEurope@vishay.com This document is subject to change without notice. Outline Dimensions Vishay Semiconductors Pad layout 11.00 MIN. (0.43) 9.65 MIN. (0.38) (D1) (3) 17.90 (0.70) 15.00 (0.625) 3.81 MIN. (0.15) 2.32 MIN. (0.08) 2.64 (0.103) (3) 2.41 (0.096) Base Plating (4) Metal b1, b3 (4) ( Seating ...

Page 8

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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