VS-16TTS12SPBF

Manufacturer Part NumberVS-16TTS12SPBF
DescriptionSCRs 1200 Volt 16 Amp
ManufacturerVishay Semiconductors
VS-16TTS12SPBF datasheet
 

Specifications of VS-16TTS12SPBF

Product CategorySCRsRohsyes
Breakover Current Ibo Max200 ARated Repetitive Off-state Voltage Vdrm1200 V
Off-state Leakage Current @ Vdrm Idrm0.5 mAForward Voltage Drop1.4 V
Gate Trigger Voltage (vgt)2 VMaximum Gate Peak Inverse Voltage10 V
Gate Trigger Current (igt)60 mAHolding Current (ih Max)100 mA
Mounting StyleSMD/SMTPackage / CaseD2PAK
Maximum Operating Temperature+ 125 CMinimum Operating Temperature- 40 C
Factory Pack Quantity1000  
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Thyristor High Voltage, Surface Mountable Phase Control SCR, 16 A
2
TO-263AB (D
PAK)
Cathode
PRODUCT SUMMARY
Package
TO-263AB (D
Diode variation
I
T(AV)
V
/V
800 V, 1200 V
DRM
RRM
V
TM
I
GT
T
- 40 °C to 125 °C
J
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
NEMA FR-4 or G-10 glass fabric-based epoxy
with 4 oz. (140 μm) copper
Aluminum IMS, R
= 15 °C/W
thCA
Aluminum IMS with heatsink, R
= 5 °C/W
thCA
Note
• T
= 55 °C, T
= 125 °C, footprint 300 mm
A
J
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
I
Sinusoidal waveform
T(AV)
I
RMS
V
/V
RRM
DRM
I
TSM
V
10 A, T
T
dV/dt
dI/dt
T
J
VOLTAGE RATINGS
V
RRM
PART NUMBER
REVERSE VOLTAGE
VS-16TTS08SPbF
VS-16TTS12SPbF
Revision: 23-Aug-11
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
FEATURES
2
Anode
• Meets MSL level 1, per J-STD-020, LF
maximum peak of 260 °C
• Designed
JEDEC-JESD47
• Compliant to RoHS Directive 2002/95/EC
• Halogen-free according to IEC 61249-2-21
1
3
Gate
definition
APPLICATIONS
• Input rectification (soft start)
2
PAK)
• Vishay input diodes, switches and output rectifiers which
Single SCR
are available in identical package outlines
10 A
DESCRIPTION
1.4 V
The VS-16TTS..SPbF high voltage series of silicon
60 mA
controlled rectifiers are specifically designed for medium
power switching and phase control applications. The glass
passivation technology used has reliable operation up to
125 °C junction temperature.
SINGLE-PHASE BRIDGE
THREE-PHASE BRIDGE
2.5
6.3
14.0
2
VALUES
800/1200
= 25 °C
J
- 40 to 125
, MAXIMUM PEAK
V
, MAXIMUM PEAK
DRM
DIRECT VOLTAGE
V
800
1200
1
www.vishay.com/doc?91000
VS-16TTS..SPbF Series
Vishay Semiconductors
and
qualified
according
UNITS
3.5
A
9.5
18.5
UNITS
10
A
16
V
200
A
1.4
V
500
V/μs
150
A/μs
°C
I
/I
RRM
DRM
AT 125 °C
V
mA
800
10
1200
Document Number: 94589
DiodesEurope@vishay.com

VS-16TTS12SPBF Summary of contents

  • Page 1

    ... T J VOLTAGE RATINGS V RRM PART NUMBER REVERSE VOLTAGE VS-16TTS08SPbF VS-16TTS12SPbF Revision: 23-Aug-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT FEATURES 2 Anode • ...

  • Page 2

    ... Typical turn-off time Revision: 23-Aug-11 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT VS-16TTS..SPbF Series SYMBOL TEST CONDITIONS °C, 180° conduction, half sine wave ...

  • Page 3

    ... Fig On-State Power Loss Characteristics Fig On-State Power Loss Characteristics 3 www.vishay.com/doc?91000 VS-16TTS..SPbF Series Vishay Semiconductors VALUES UNITS - 40 to 125 240 1.3 °C 0.07 16TTS08S 16TTS12S 180° 120° 90° 60° 30° RMS Limit Conduction Angle 16TTS ...

  • Page 4

    ... Operation) Single Pulse 16TTS.. Series 0.001 0.01 0.1 Square Wave Pulse Duration (s) Fig Thermal Impedance Z Characteristics thJC 4 www.vishay.com/doc?91000 VS-16TTS..SPbF Series Vishay Semiconductors Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Initial T = 125° Voltage Reapplied Rated V Reapplied RRM 16TTS.. Series 0.1 ...

  • Page 5

    ... PAK version - None = Tube TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) - PbF = Lead (Pb)-free and RoHS compliant LINKS TO RELATED DOCUMENTS 5 www.vishay.com/doc?91000 VS-16TTS..SPbF Series Vishay Semiconductors (3) (2) (1) 10 100 S TRL PbF 800 V RRM 12 = 1200 V www ...

  • Page 6

    ... E 9.65 0.039 E1 7.90 0.035 4 e 0.070 H 14.61 0.068 4 L 1.78 0.029 L1 0.023 4 L2 1.27 0.065 L3 0.380 2 L4 4.78 DiodesEurope@vishay.com This document is subject to change without notice. Outline Dimensions Vishay Semiconductors Pad layout 11.00 MIN. (0.43) 9.65 MIN. (0.38) (D1) (3) 17.90 (0.70) 15.00 (0.625) 3.81 MIN. (0.15) 2.32 MIN. (0.08) 2.64 (0.103) (3) 2.41 (0.096) Base Plating (4) Metal b1, b3 (4) ( Seating ...

  • Page 7

    ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...