... 25_C 70_C stg Symbol sec R R thJA Steady State Steady State R thJF Si4430DY Vishay Siliconix N-Channel MOSFET 10 secs Steady State 30 "20 "23 "15 "19 "12 "60 2.9 1.3 3.5 1.6 2 150 Typical Maximum ...
... Si4430DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...
... V - Source-to-Drain Voltage (V) SD Document Number: 70852 S-03662—Rev. C, 14-Apr-03 New Product 25_C J 0.8 1.0 1.2 Si4430DY Vishay Siliconix Capacitance 6000 C 5000 iss 4000 3000 2000 C oss 1000 C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...