SI4430DY-E3 Vishay/Siliconix, SI4430DY-E3 Datasheet

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SI4430DY-E3

Manufacturer Part Number
SI4430DY-E3
Description
MOSFET 30V 23A 3.5W
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI4430DY-E3

Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
23 A
Resistance Drain-source Rds (on)
4 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Fall Time
15 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.6 W
Rise Time
15 ns
Factory Pack Quantity
100
Typical Turn-off Delay Time
105 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4430DY-E3
Manufacturer:
VISHAY
Quantity:
1 535
Notes
a.
Document Number: 70852
S-03662—Rev. C, 14-Apr-03
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
30
30
(V)
J
ti
t A bi
G
S
S
S
0.004 (typ)@ V
J
J
a
a
0.008 @ V
= 150_C)
= 150_C)
t
a
a
1
2
3
4
Parameter
Parameter
r
DS(on)
Top View
a
a
GS
SO-8
(W)
GS
N-Channel 30-V (D-S) MOSFET
= 4.5 V
= 10 V
a
8
7
6
5
D
D
D
D
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
T
T
T
T
t v 10 sec
A
A
A
A
I
New Product
= 25_C
= 70_C
= 25_C
= 70_C
D
"23
"17
(A)
Symbol
Symbol
T
R
R
R
V
J
V
I
P
P
DM
, T
I
I
I
thJA
thJF
DS
GS
D
D
S
D
D
stg
G
N-Channel MOSFET
10 secs
Typical
"23
"19
2.9
3.5
2.2
29
67
13
D
S
- 55 to 150
"20
"60
30
Steady State
Maximum
Vishay Siliconix
"15
"12
1.3
1.6
35
80
16
1
Si4430DY
www.vishay.com
Unit
Unit
_C/W
C/W
_C
W
W
V
V
A
A
2-1

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SI4430DY-E3 Summary of contents

Page 1

... 25_C 70_C stg Symbol sec R R thJA Steady State Steady State R thJF Si4430DY Vishay Siliconix N-Channel MOSFET 10 secs Steady State 30 "20 "23 "15 "19 "12 "60 2.9 1.3 3.5 1.6 2 150 Typical Maximum ...

Page 2

... Si4430DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...

Page 3

... V - Source-to-Drain Voltage (V) SD Document Number: 70852 S-03662—Rev. C, 14-Apr-03 New Product 25_C J 0.8 1.0 1.2 Si4430DY Vishay Siliconix Capacitance 6000 C 5000 iss 4000 3000 2000 C oss 1000 C rss Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...

Page 4

... Si4430DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 = 250 0.0 - 0.2 - 0.4 - 0.6 - 0 Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse ...

Page 5

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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