VS-80RIA40PBF Vishay Semiconductors, VS-80RIA40PBF Datasheet

VS-80RIA40PBF

Manufacturer Part Number

VS-80RIA40PBF

Description

SCRs 80 Amp 400 Volt 1990 Amp ITSM

Manufacturer

Vishay Semiconductors

Datasheet

1.VS-80RIA40PBF.pdf (8 pages)

Specifications of VS-80RIA40PBF

Product Category

SCRs

Rohs

yes

Breakover Current Ibo Max

1990 A

Rated Repetitive Off-state Voltage Vdrm

400 V

Off-state Leakage Current @ Vdrm Idrm

15 mA

Forward Voltage Drop

1.6 V

Gate Trigger Voltage (vgt)

2.5 V

Maximum Gate Peak Inverse Voltage

10 V

Gate Trigger Current (igt)

120 mA

Holding Current (ih Max)

200 mA

Mounting Style

Stud

Package / Case

TO-94

Factory Pack Quantity

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ELECTRICAL SPECIFICATIONS

Document Number: 94392

Revision: 17-Sep-10

PRODUCT SUMMARY

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER

VOLTAGE RATINGS

TYPE NUMBER

80RIA

81RIA

T(AV)

T(RMS)

TSM

DRM

RRM

T(AV)

TO-209AC (TO-94)

Phase Control Thyristors (Stud Version), 80 A

VOLTAGE

CODE

120

DiodesAmericas@vishay.com, DiodesAsia@vishay.com,

For technical questions within your region, please contact one of the following:

50 Hz

60 Hz

50 Hz

60 Hz

Typical

TEST CONDITIONS

REPETITIVE PEAK AND

OFF-STATE VOLTAGE

DRM

80RIA...PbF, 81RIA...PbF, 82RIA...PbF Series

80 A

RRM

1200

400

800

, MAXIMUM

FEATURES

• Hermetic glass-metal seal

• International standard case TO-209AC (TO-94)

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• DC motor controls

• Controlled DC power supplies

• AC controllers

RSM

400 to 1200

, MAXIMUM NON-REPETITIVE

- 40 to 125

VALUES

DiodesEurope@vishay.com

1900

1990

125

110

PEAK VOLTAGE

1300

500

900

Vishay Semiconductors

DRM

UNITS

AT T

°C

μs

°C

RRM

www.vishay.com

= 125 °C

MAXIMUM

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