VS-ST333C08LFM1 Vishay Semiconductors, VS-ST333C08LFM1 Datasheet

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VS-ST333C08LFM1

Manufacturer Part Number
VS-ST333C08LFM1
Description
SCRs 720 Amp 800 Volt 1230 Amp IT(RMS)
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of VS-ST333C08LFM1

Product Category
SCRs
Rohs
yes
Breakover Current Ibo Max
11500 A
Rated Repetitive Off-state Voltage Vdrm
800 V
Off-state Leakage Current @ Vdrm Idrm
50 mA
Forward Voltage Drop
1.96 V
Gate Trigger Voltage (vgt)
3 V
Maximum Gate Peak Inverse Voltage
5 V
Gate Trigger Current (igt)
200 mA
Holding Current (ih Max)
600 mA
Mounting Style
SMD/SMT
Package / Case
TO-200AC
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Factory Pack Quantity
3
ELECTRICAL SPECIFICATIONS
Document Number: 93678
Revision: 15-May-08
PRODUCT SUMMARY
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
I
I
I
V
t
T
VOLTAGE RATINGS
TYPE NUMBER
ST333C..C
T(AV)
T(RMS)
TSM
2
q
DRM
J
t
/V
RRM
I
T(AV)
TO-200AB (E-PUK)
VOLTAGE
CODE
04
08
T
T
50 Hz
60 Hz
50 Hz
60 Hz
Range
hs
hs
(Hockey PUK Version), 720 A
For technical questions, contact: ind-modules@vishay.com
REPETITIVE PEAK VOLTAGE
TEST CONDITIONS
Inverter Grade Thyristors
V
720 A
DRM
/V
RRM
400
800
V
, MAXIMUM
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• International standard case TO-200AB (E-PUK)
• High surge current capability
• Low thermal impedance
• High speed performance
• Lead (Pb)-free
TYPICAL APPLICATIONS
• Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
NON-REPETITIVE PEAK VOLTAGE
- 40 to 125
400 to 800
VALUES
10 to 30
11 000
11 500
1435
720
605
553
55
25
V
RSM
Vishay High Power Products
, MAXIMUM
500
900
V
ST333C..C Series
AT T
I
DRM
UNITS
kA
°C
°C
µs
°C
/I
J
A
A
A
V
RRM
2
= T
s
www.vishay.com
mA
J
50
MAXIMUM
MAXIMUM
RoHS
COMPLIANT
1

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VS-ST333C08LFM1 Summary of contents

Page 1

PUK Version), 720 A TO-200AB (E-PUK) PRODUCT SUMMARY I T(AV) MAJOR RATINGS AND CHARACTERISTICS PARAMETER I T(AV T(RMS TSM DRM ...

Page 2

ST333C..C Series Vishay High Power Products CURRENT CARRYING CAPABILITY FREQUENCY 50 Hz 400 Hz 1000 Hz 2500 Hz Recovery voltage V r Voltage before turn- Rise of on-state current dI/dt Heatsink temperature Equivalent values for RC circuit ON-STATE ...

Page 3

BLOCKING PARAMETER Maximum critical rate of rise of off-state voltage Maximum peak reverse and off-state leakage current TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak positive gate current Maximum peak positive gate voltage Maximum peak negative ...

Page 4

ST333C..C Series Vishay High Power Products 130 ST333C..C Series 120 (Single Side Cooled) R (DC) = 0.09 K/W 110 100 tio 30° 60° 40 ...

Page 5

Rated L oad Con dition And W ith 9500 Rated V Applied Following Surge itial T = 125°C 9000 @ 60 Hz 0.0083 s 8500 @ 50 Hz 0.0100 s 8000 7500 7000 ...

Page 6

ST333C..C Series Vishay High Power Products 000 ulse ...

Page 7

0 0 ST33 3C ..C Se ries Sinuso idal pulse lse B ase ...

Page 8

ST333C..C Series Vishay High Power Products ORDERING INFORMATION TABLE Device code Thyristor - Essential part number Fast turn off Ceramic PUK 5 - Voltage code ...

Page 9

... TO-200AB (E-PUK) Anode to gate Creepage distance: 11.18 (0.44) minimum Strike distance: 7.62 (0.30) minimum 25.3 (0.99) DIA. MAX. 25.3 (0.99) Gate terminal for DIA. MAX. 1.47 (0.06) DIA. pin receptacle 40.5 (1.59) DIA. MAX. 2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep 42 (1.65) MAX. 28 (1.10) For technical questions, contact: indmodules@vishay.com Outline Dimensions Vishay Semiconductors 0.3 (0.01) MIN. 14.1/15.1 (0.56/0.59) 0.3 (0.01) MIN. 6.5 (0.26) 4.75 (0.19) 25° ± 5° www.vishay.com 1 ...

Page 10

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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