IRFR9024CPBF

Manufacturer Part NumberIRFR9024CPBF
DescriptionMOSFET P-Chan 60V 8.8 Amp
ManufacturerVishay Semiconductors
IRFR9024CPBF datasheet
 


Specifications of IRFR9024CPBF

Product CategoryMOSFETRohsyes
Factory Pack Quantity75  
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PRODUCT SUMMARY
V
(V)
DS
R
()
V
= - 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
DPAK
IPAK
(TO-252)
(TO-251)
G
D
D
S
G
D S
G
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and
SiHFR9024-GE3
Halogen-free
IRFR9024PbF
Lead (Pb)-free
SiHFR9024-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
e
Linear Derating Factor (PCB Mount)
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
e
Maximum Power Dissipation (PCB Mount)
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= - 25 V, starting T
= 25 °C, L = 4.5 mH, R
DD
J
 - 11 A, dI/dt  140 A/μs, V
 V
c. I
, T
SD
DD
DS
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S13-0168-Rev. D, 04-Feb-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
IRFR9024, IRFU9024, SiHFR9024, SiHFU9024
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
- 60
• Repetitive Avalanche Rated
0.28
• Surface Mount (IRFR9024, SiHFR9024)
19
• Straight Lead (IRFU9024, SiHFU9024)
5.4
• Available in Tape and Reel
11
• P-Channel
Single
• Fast Switching
S
• Material categorization: For definitions of compliance
please see
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effictiveness.
D
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
P-Channel MOSFET
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
DPAK (TO-252)
DPAK (TO-252)
a
SiHFR9024TR-GE3
SiHFR9024TRL-GE3
a
IRFR9024TRPbF
IRFR9024TRLPbF
a
SiHFR9024T-E3
SiHFR9024TL-E3
= 25 °C, unless otherwise noted)
C
SYMBOL
T
= 25 °C
C
V
at - 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
T
= 25 °C
A
dV/dt
T
d
for 10 s
= 25 , I
= - 8.8 A (see fig. 12).
g
AS
 150 °C.
J
1
For technical questions, contact:
hvm@vishay.com
www.vishay.com/doc?91000
Vishay Siliconix
www.vishay.com/doc?99912
device
design,
low
on-resistance
DPAK (TO-252)
IPAK (TO-251)
a
a
SiHFR9024TRR-GE3
SiHFU9024-GE3
a
a
IRFR9024TRRPbF
IRFU9024PbF
a
a
SiHFR9024TR-E3
SiHFU9024-E3
LIMIT
UNIT
V
- 60
DS
V
V
± 20
GS
- 8.8
I
D
- 5.6
A
I
- 35
DM
0.33
W/°C
0.020
E
300
mJ
AS
I
- 8.8
A
AR
E
5.0
mJ
AR
42
P
W
D
2.5
- 4.5
V/ns
, T
- 55 to + 150
J
stg
°C
260
Document Number: 91278
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