IRFR9024CPBF Vishay Semiconductors, IRFR9024CPBF Datasheet

IRFR9024CPBF

Manufacturer Part Number

IRFR9024CPBF

Description

MOSFET P-Chan 60V 8.8 Amp

Manufacturer

Vishay Semiconductors

Datasheet

1.IRFR9024CPBF.pdf (11 pages)

Specifications of IRFR9024CPBF

Product Category

MOSFET

Rohs

yes

Factory Pack Quantity

Current page: 1 of 11
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Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

c. I

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

S13-0168-Rev. D, 04-Feb-13

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free and

Halogen-free

Lead (Pb)-free

ABSOLUTE MAXIMUM RATINGS (T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Linear Derating Factor (PCB Mount)

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

(TO-252)

DS(on)

DPAK

(Max.) (nC)

(nC)

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

(V)

(nC)

 - 11 A, dI/dt  140 A/μs, V

= - 25 V, starting T

()

(TO-251)

www.vishay.com

IPAK

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

DPAK (TO-252)

SiHFR9024-GE3

IRFR9024PbF

SiHFR9024-E3

= 25 °C, L = 4.5 mH, R

D S

 V

= - 10 V

, T

P-Channel MOSFET

Single

For technical questions, contact:

- 60

IRFR9024, IRFU9024, SiHFR9024, SiHFU9024

5.4

 150 °C.

DPAK (TO-252)

IRFR9024TRPbF

SiHFR9024TR-GE3

SiHFR9024T-E3

= 25 , I

= 25 °C, unless otherwise noted)

Power MOSFET

0.28

at - 10 V

= - 8.8 A (see fig. 12).

for 10 s

= 25 °C

DPAK (TO-252)

SiHFR9024TRL-GE3

IRFR9024TRLPbF

SiHFR9024TL-E3

= 100 °C

= 25 °C

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Surface Mount (IRFR9024, SiHFR9024)

• Straight Lead (IRFU9024, SiHFU9024)

• Available in Tape and Reel

• P-Channel

• Fast Switching

• Material categorization: For definitions of compliance

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

cost-effictiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU, SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

please see

hvm@vishay.com

SYMBOL

www.vishay.com/doc?91000

dV/dt

www.vishay.com/doc?99912

, T

device

stg

DPAK (TO-252)

SiHFR9024TRR-GE3

IRFR9024TRRPbF

SiHFR9024TR-E3

design,

- 55 to + 150

LIMIT

0.020

- 8.8

- 5.6

- 8.8

- 4.5

± 20

0.33

- 60

- 35

300

260

5.0

2.5

low

Vishay Siliconix

Document Number: 91278

on-resistance

IPAK (TO-251)

SiHFU9024-GE3

IRFU9024PbF

SiHFU9024-E3

UNIT

W/°C

V/ns

°C

and

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