IRFR9024CTRLPBF Vishay Semiconductors, IRFR9024CTRLPBF Datasheet

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IRFR9024CTRLPBF

Manufacturer Part Number
IRFR9024CTRLPBF
Description
MOSFET P-Chan 60V 8.8 Amp
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of IRFR9024CTRLPBF

Product Category
MOSFET
Rohs
yes
Factory Pack Quantity
3000
Note
a. See device orientation.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
c. I
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S13-0168-Rev. D, 04-Feb-13
PRODUCT SUMMARY
V
R
Q
Q
Q
Configuration
ORDERING INFORMATION
Package
Lead (Pb)-free and
Halogen-free
Lead (Pb)-free
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB Mount)
Single Pulse Avalanche Energy
Repetitive Avalanche Current
Repetitive Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
(TO-252)
DS
DS(on)
D
g
gs
gd
SD
DD
DPAK
(Max.) (nC)
(nC)
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
(V)
(nC)
 - 11 A, dI/dt  140 A/μs, V
= - 25 V, starting T
()
G
S
D
(TO-251)
www.vishay.com
IPAK
a
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
J
DPAK (TO-252)
SiHFR9024-GE3
IRFR9024PbF
SiHFR9024-E3
= 25 °C, L = 4.5 mH, R
G
c
D S
a
a
b
V
DD
GS
 V
e
= - 10 V
DS
G
, T
e
P-Channel MOSFET
Single
For technical questions, contact:
J
- 60
IRFR9024, IRFU9024, SiHFR9024, SiHFU9024
5.4
 150 °C.
19
11
DPAK (TO-252)
IRFR9024TRPbF
SiHFR9024TR-GE3
SiHFR9024T-E3
g
C
d
= 25 , I
S
D
= 25 °C, unless otherwise noted)
Power MOSFET
V
GS
0.28
at - 10 V
AS
T
T
= - 8.8 A (see fig. 12).
a
a
C
A
for 10 s
= 25 °C
= 25 °C
a
T
1
T
C
C
DPAK (TO-252)
SiHFR9024TRL-GE3
IRFR9024TRLPbF
SiHFR9024TL-E3
= 100 °C
= 25 °C
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR9024, SiHFR9024)
• Straight Lead (IRFU9024, SiHFU9024)
• Available in Tape and Reel
• P-Channel
• Fast Switching
• Material categorization: For definitions of compliance
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effictiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
please see
hvm@vishay.com
SYMBOL
www.vishay.com/doc?91000
T
dV/dt
J
www.vishay.com/doc?99912
V
V
E
E
I
a
I
, T
P
device
DM
a
I
AR
GS
DS
D
AS
AR
D
stg
a
DPAK (TO-252)
SiHFR9024TRR-GE3
IRFR9024TRRPbF
SiHFR9024TR-E3
design,
- 55 to + 150
LIMIT
0.020
- 8.8
- 5.6
- 8.8
- 4.5
± 20
0.33
- 60
- 35
300
260
5.0
2.5
42
low
Vishay Siliconix
a
Document Number: 91278
a
a
on-resistance
IPAK (TO-251)
SiHFU9024-GE3
IRFU9024PbF
SiHFU9024-E3
UNIT
W/°C
V/ns
mJ
mJ
°C
W
V
A
A
and

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IRFR9024CTRLPBF Summary of contents

Page 1

... Single • Fast Switching S • Material categorization: For definitions of compliance please see DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized cost-effictiveness. D The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight ...

Page 2

THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown ...

Page 3

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics, T Fig. 2 -Typical Output Characteristics, T S13-0168-Rev. D, 04-Feb-13 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE ...

Page 4

Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage S13-0168-Rev. D, 04-Feb-13 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC ...

Page 5

Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case S13-0168-Rev. D, 04-Feb-13 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO ...

Page 6

Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current ...

Page 7

D.U. Note • Compliment N-Channel of D.U.T. for driver Driver gate drive D.U.T. l Reverse recovery current D.U.T. V Re-applied voltage Inductor current Note for logic level and - ...

Page 8

TO-252AA (HIGH VOLTAGE) D1 DIM. MIN. E 6. 0.89 L4 0.64 D 6.00 H 9.40 b 0.64 b2 0. 2.20 A1 0.00 c 0.45 c2 0.45 D1 5.30 E1 4.40 θ ...

Page 9

TO-251AA (HIGH VOLTAGE Thermal PAD D1 4 (Datum A) View MILLIMETERS DIM. MIN. MAX. A 2.18 2.39 A1 0.89 1.14 b 0.64 0.89 b1 0.65 0.79 b2 0.76 1.14 b3 0.76 1.04 b4 4.95 5.46 ...

Page 10

RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) Return to Index Return to Index Document Number: 72594 Revision: 21-Jan-08 Application Note 826 0.224 (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Vishay Siliconix www.vishay.com 3 ...

Page 11

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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