IRFR9024CTRLPBF

Manufacturer Part NumberIRFR9024CTRLPBF
DescriptionMOSFET P-Chan 60V 8.8 Amp
ManufacturerVishay Semiconductors
IRFR9024CTRLPBF datasheet
 


Specifications of IRFR9024CTRLPBF

Product CategoryMOSFETRohsyes
Factory Pack Quantity3000  
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PRODUCT SUMMARY
V
(V)
DS
R
()
V
= - 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
DPAK
IPAK
(TO-252)
(TO-251)
G
D
D
S
G
D S
G
ORDERING INFORMATION
Package
DPAK (TO-252)
Lead (Pb)-free and
SiHFR9024-GE3
Halogen-free
IRFR9024PbF
Lead (Pb)-free
SiHFR9024-E3
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
e
Linear Derating Factor (PCB Mount)
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
e
Maximum Power Dissipation (PCB Mount)
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
= - 25 V, starting T
= 25 °C, L = 4.5 mH, R
DD
J
 - 11 A, dI/dt  140 A/μs, V
 V
c. I
, T
SD
DD
DS
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S13-0168-Rev. D, 04-Feb-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
IRFR9024, IRFU9024, SiHFR9024, SiHFU9024
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
- 60
• Repetitive Avalanche Rated
0.28
• Surface Mount (IRFR9024, SiHFR9024)
19
• Straight Lead (IRFU9024, SiHFU9024)
5.4
• Available in Tape and Reel
11
• P-Channel
Single
• Fast Switching
S
• Material categorization: For definitions of compliance
please see
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized
cost-effictiveness.
D
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
P-Channel MOSFET
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
DPAK (TO-252)
DPAK (TO-252)
a
SiHFR9024TR-GE3
SiHFR9024TRL-GE3
a
IRFR9024TRPbF
IRFR9024TRLPbF
a
SiHFR9024T-E3
SiHFR9024TL-E3
= 25 °C, unless otherwise noted)
C
SYMBOL
T
= 25 °C
C
V
at - 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
T
= 25 °C
A
dV/dt
T
d
for 10 s
= 25 , I
= - 8.8 A (see fig. 12).
g
AS
 150 °C.
J
1
For technical questions, contact:
hvm@vishay.com
www.vishay.com/doc?91000
Vishay Siliconix
www.vishay.com/doc?99912
device
design,
low
on-resistance
DPAK (TO-252)
IPAK (TO-251)
a
a
SiHFR9024TRR-GE3
SiHFU9024-GE3
a
a
IRFR9024TRRPbF
IRFU9024PbF
a
a
SiHFR9024TR-E3
SiHFU9024-E3
LIMIT
UNIT
V
- 60
DS
V
V
± 20
GS
- 8.8
I
D
- 5.6
A
I
- 35
DM
0.33
W/°C
0.020
E
300
mJ
AS
I
- 8.8
A
AR
E
5.0
mJ
AR
42
P
W
D
2.5
- 4.5
V/ns
, T
- 55 to + 150
J
stg
°C
260
Document Number: 91278
and

IRFR9024CTRLPBF Summary of contents

  • Page 1

    ... Single • Fast Switching S • Material categorization: For definitions of compliance please see DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized cost-effictiveness. D The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight ...

  • Page 2

    THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient a (PCB Mount) Maximum Junction-to-Case (Drain) Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown ...

  • Page 3

    TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig Typical Output Characteristics, T Fig. 2 -Typical Output Characteristics, T S13-0168-Rev. D, 04-Feb-13 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE ...

  • Page 4

    Fig Typical Capacitance vs. Drain-to-Source Voltage Fig Typical Gate Charge vs. Gate-to-Source Voltage S13-0168-Rev. D, 04-Feb-13 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC ...

  • Page 5

    Fig Maximum Drain Current vs. Case Temperature Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case S13-0168-Rev. D, 04-Feb-13 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO ...

  • Page 6

    Vary t to obtain p required I AS D.U. 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Fig. 12c - Maximum Avalanche Energy vs. Drain Current ...

  • Page 7

    D.U. Note • Compliment N-Channel of D.U.T. for driver Driver gate drive D.U.T. l Reverse recovery current D.U.T. V Re-applied voltage Inductor current Note for logic level and - ...

  • Page 8

    TO-252AA (HIGH VOLTAGE) D1 DIM. MIN. E 6. 0.89 L4 0.64 D 6.00 H 9.40 b 0.64 b2 0. 2.20 A1 0.00 c 0.45 c2 0.45 D1 5.30 E1 4.40 θ ...

  • Page 9

    TO-251AA (HIGH VOLTAGE Thermal PAD D1 4 (Datum A) View MILLIMETERS DIM. MIN. MAX. A 2.18 2.39 A1 0.89 1.14 b 0.64 0.89 b1 0.65 0.79 b2 0.76 1.14 b3 0.76 1.04 b4 4.95 5.46 ...

  • Page 10

    RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) Return to Index Return to Index Document Number: 72594 Revision: 21-Jan-08 Application Note 826 0.224 (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Vishay Siliconix www.vishay.com 3 ...

  • Page 11

    ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...