IRFR9024CTRLPBF Vishay Semiconductors, IRFR9024CTRLPBF Datasheet - Page 2

• Manufacturer Part Number: IRFR9024CTRLPBF
• Description: MOSFET P-Chan 60V 8.8 Amp
• Manufacturer: Vishay Semiconductors

Specifications of IRFR9024CTRLPBF

• Product Category: MOSFET
• Rohs: yes
• Factory Pack Quantity: 3000

Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width  300 μs; duty cycle  2 %.
S13-0168-Rev. D, 04-Feb-13
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
(PCB Mount)
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Case (Drain)
SPECIFICATIONS (T
PARAMETER
Static
Drain-Source Breakdown Voltage
V
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
DS
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
Temperature Coefficient
a
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
J
= 25 °C, unless otherwise noted)
a
For technical questions, contact:
IRFR9024, IRFU9024, SiHFR9024, SiHFU9024
SYMBOL
SYMBOL
V
R
V
t
t
C
R
I
I
C
R
R
V
DS(on)
C
Q
Q
V
GS(th)
d(on)
d(off)
I
GSS
DSS
Q
DS
g
Q
L
L
t
SM
I
t
t
oss
t
on
thJA
thJA
thJC
DS
rss
SD
iss
gd
S
rr
fs
gs
r
D
S
f
g
rr
/T
J
V
V
T
Between lead,
6 mm (0.25") from
package and center of
die contact
J
GS
GS
p - n junction diode
V
R
MOSFET symbol
= 25 °C, I
T
DS
integral reverse
Intrinsic turn-on time is negligible (turn-on is dominated by L
J
= - 10 V
= - 10 V
g
Reference to 25 °C, I
showing the
= 25 °C, I
= 18 , R
MIN.
= - 48 V, V
2
V
V
-
-
-
V
V
V
DS
DD
TEST CONDITIONS
DS
DS
GS
= - 25 V, I
= - 30 V, I
F
= - 60 V, V
= V
= 0 V, I
V
V
= - 11 A, dI/dt = 100 A/μs
f = 1.0 MHz
V
DS
GS
S
D
I
[e-mail]
GS
GS
D
GS
= - 8.8 A, V
= 2.5 , see fig. 10
= - 25 V,
= ± 20 V
= - 11 A, V
, I
= 0 V,
see fig. 6 and 13
= 0 V, T
D
D
D
D
= 250 μA
I
= 250 μA
D
GS
= - 5.3 A
= - 11 A,
www.vishay.com/doc?91000
= - 5.3 A
TYP.
D
= 0 V
J
= 1 mA
GS
-
-
-
DS
= 125 °C
G
G
= 0 V
= - 48 V,
b
D
S
b
b
b
D
S
b
MIN.
- 2.0
- 60
2.9
MAX.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
110
3.0
50
Vishay Siliconix
Document Number: 91278
- 0.063
TYP.
0.32
570
360
100
4.5
7.5
65
13
68
15
29
-
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
± 100
- 100
- 500
- 4.0
0.28
- 8.8
- 6.3
0.64
- 35
200
S
5.4
19
11
-
-
-
-
-
-
-
-
-
-
-
-
and L
UNIT
°C/W
D
UNIT
V/°C
)
nA
μA
pF
nC
nH
μC
ns
ns

V
V
S
A
V