IRFR9024CTRLPBF Vishay Semiconductors, IRFR9024CTRLPBF Datasheet - Page 7

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IRFR9024CTRLPBF

Manufacturer Part Number
IRFR9024CTRLPBF
Description
MOSFET P-Chan 60V 8.8 Amp
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of IRFR9024CTRLPBF

Product Category
MOSFET
Rohs
yes
Factory Pack Quantity
3000
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91278.
S13-0168-Rev. D, 04-Feb-13
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Re-applied
voltage
Reverse
recovery
current
+
R
-
g
D.U.T.
Note
• Compliment N-Channel of D.U.T. for driver
a. V
Note
D.U.T. V
Driver gate drive
D.U.T. l
Inductor current
GS
= - 5 V for logic level and - 3 V drive devices
P.W.
SD
For technical questions, contact:
DS
IRFR9024, IRFU9024, SiHFR9024, SiHFU9024
waveform
waveform
Peak Diode Recovery dV/dt Test Circuit
Body diode forward drop
Ripple ≤ 5 %
Period
Body diode forward
+
-
Fig. 14 - For P-Channel
• dV/dt controlled by R
• I
• D.U.T. - device under test
current
Diode recovery
SD
controlled by duty factor “D”
Circuit layout considerations
• Low stray inductance
• Ground plane
• Low leakage inductance
dV/dt
current transformer
7
dI/dt
D =
hvm@vishay.com
-
g
Period
P.W.
www.vishay.com/doc?91000
+
I
V
V
SD
GS
DD
= - 10 V
+
-
V
DD
a
Vishay Siliconix
Document Number: 91278

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