PSMN004-60B /T3 NXP Semiconductors, PSMN004-60B /T3 Datasheet
PSMN004-60B /T3
Specifications of PSMN004-60B /T3
Related parts for PSMN004-60B /T3
PSMN004-60B /T3 Summary of contents
Page 1
... PSMN004-60B N-channel TrenchMOS SiliconMAX standard level FET Rev. 02 — 15 December 2009 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
Page 2
... PSMN004-60B_2 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Simplified outline mb [ SOT404 (D2PAK) Rev. 02 — 15 December 2009 PSMN004-60B Graphic symbol mbb076 Version SOT404 © NXP B.V. 2009. All rights reserved ...
Page 3
... °C; unclamped j(init) 03ah79 120 P der (%) 120 150 180 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Rev. 02 — 15 December 2009 PSMN004-60B Min Max - kΩ -20 20 Figure Figure 1 and Figure 3 - 400 - 230 ...
Page 4
... Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN004-60B_2 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET DC 10 Rev. 02 — 15 December 2009 PSMN004-60B 03ah81 µs p 100 µ 100 (V) DS © ...
Page 5
... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN004-60B_2 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Conditions see Figure 4 mounted on a printed circuit board; minimum footprint −5 −4 −3 − Rev. 02 — 15 December 2009 PSMN004-60B Min Typ Max - - 0. 03af48 t p δ ...
Page 6
... MHz see Figure 12 = 1.25 Ω Ω °C G(ext °C; see Rev. 02 — 15 December 2009 PSMN004-60B Min Typ Max Figure 4.4 Figure Figure 500 - 0.02 ...
Page 7
... V GS(th) (V) max − (V) GS Fig 8. Gate-source threshold voltage as a function of junction temperature Rev. 02 — 15 December 2009 PSMN004-60B 03ah84 V > DSon = 175 ° ° 03aa32 max typ ...
Page 8
... Q (nC) G Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 15 December 2009 PSMN004-60B 03aa28 0 60 120 T (°C) j 03ah87 − (V) DS © NXP B.V. 2009. All rights reserved. 180 ...
Page 9
... Fig 13. Source current as a function of source-drain voltage; typical values PSMN004-60B_2 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET 100 (A) 80 175 ° ° 0.0 0.5 1.0 V Rev. 02 — 15 December 2009 PSMN004-60B 03ah86 1.5 (V) SD © NXP B.V. 2009. All rights reserved ...
Page 10
... N-channel TrenchMOS SiliconMAX standard level FET 2 scale max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 02 — 15 December 2009 PSMN004-60B mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2009. All rights reserved. SOT404 ...
Page 11
... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number PSMN004-60B separated from data sheet PSMN004_60P_60B-01. PSMN004_60P_60B-01 20020426 (9397 750 09156) PSMN004-60B_2 ...
Page 12
... Export might require a prior authorization from national authorities. 9.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS— trademark of NXP B.V. to:salesaddresses@nxp.com Rev. 02 — 15 December 2009 PSMN004-60B © NXP B.V. 2009. All rights reserved ...
Page 13
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 15 December 2009 Document identifier: PSMN004-60B_2 ...