NDS0605_D87Z Fairchild Semiconductor, NDS0605_D87Z Datasheet

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NDS0605_D87Z

Manufacturer Part Number
NDS0605_D87Z
Description
MOSFET P-Channel FET Enhancement Mode
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of NDS0605_D87Z

Product Category
MOSFET
Rohs
yes
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
- 0.18 A
Resistance Drain-source Rds (on)
5 Ohms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23-3
Fall Time
6.3 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
0.36 W
Rise Time
6.3 ns
Factory Pack Quantity
10000
Typical Turn-off Delay Time
10 ns
NDS0605
P-Channel Enhancement Mode Field Effect Transistor
General Description
These
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. This very high
density process has been designed to minimize on-
state
performance and fast switching. They can be used, with
a minimum of effort, in most applications requiring up to
180mA DC and can deliver current up to 1A.
This product is particularly suited to low voltage
applications requiring a low current high side switch.
2002 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
T
Thermal Characteristics
R
Package Marking and Ordering Information
D
J
L
DSS
GSS
D
θJA
, T
Device Marking
STG
resistance,
P-Channel enhancement mode field effect
65D
SOT-23
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Derate Above 25°C
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds
Thermal Resistance, Junction-to-Ambient
provide
D
– Continuous
– Pulsed
rugged
NDS0605
G
Device
Parameter
and
S
reliable
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1)
(Note 1)
(Note 1)
Features
• −0.18A, −60V.
• Voltage controlled p-channel small signal switch
• High density cell design for low R
High saturation current
Tape width
G
−55 to +150
Ratings
8mm
R
DS(ON)
−0.18
0.36
−60
±20
300
350
2.9
−1
D
= 5 Ω @ V
S
DS(ON)
GS
July 2002
= −10 V
NDS0605 Rev B1(W)
3000 units
Quantity
mW/°C
Units
°C/W
°C
°C
W
V
V
A

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NDS0605_D87Z Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient R θJA Package Marking and Ordering Information Device Marking Device 65D NDS0605 2002 Fairchild Semiconductor Corporation Features • −0.18A, −60V. • Voltage controlled p-channel small signal switch • High density cell design for low R and reliable • ...

Page 2

Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate–Body Leakage. GSS On Characteristics (Note 2) V Gate Threshold Voltage GS(th) ∆V ...

Page 3

Typical Characteristics 1.4 V =-10V -4.5V GS -4.0V -6.0V 1.2 1 0.8 0.6 0.4 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -0. ...

Page 4

Typical Characteristics -0. -12V 0.4 0.8 1 GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics LIMIT DS(ON) 1 100ms 0.1 1s 10s ...

Page 5

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