SI1563EDH-E3 Vishay/Siliconix

SI1563EDH-E3

Manufacturer Part Number

SI1563EDH-E3

Description

MOSFET 20V 1.28/1.0

Manufacturer

Vishay/Siliconix

Specifications of SI1563EDH-E3

Product Category

MOSFET

Rohs

yes

Transistor Polarity

N and P-Channel

Drain-source Breakdown Voltage

+/- 20 V

Gate-source Breakdown Voltage

+/- 12 V

Continuous Drain Current

1.28 A, - 1 A

Resistance Drain-source Rds (on)

0.28 Ohms at 4.5 V, 0.49 Ohms at - 4.5 V

Configuration

Dual

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Package / Case

SOT-363-6

Fall Time

210 nS, 850 nS

Forward Transconductance Gfs (max / Min)

2.6 S, 1.5 S

Gate Charge Qg

0.65 nC, 1.2 nC

Minimum Operating Temperature

- 55 C

Power Dissipation

570 mW

Rise Time

85 nS, 480 nS

Factory Pack Quantity

3000

Tradename

TrenchFET

Typical Turn-off Delay Time

350 nS, 840 nS

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