SI4804DY-E3 Vishay/Siliconix, SI4804DY-E3 Datasheet

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SI4804DY-E3

Manufacturer Part Number
SI4804DY-E3
Description
MOSFET 30V 7.5A 2W
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI4804DY-E3

Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.7 A
Resistance Drain-source Rds (on)
22 mOhms
Configuration
Dual
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SO-8
Fall Time
10 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.1 W
Rise Time
10 ns
Factory Pack Quantity
100
Typical Turn-off Delay Time
21 ns
Notes
a.
Document Number: 71088
S-50524—Rev. E, 28-Mar-05
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Single Avalanche Current
Single Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1” x 1” FR4 Board.
i
DS
30
30
Ordering Information: Si4804DY
(V)
J
ti
G
G
S
S
1
1
2
2
t A bi
1
2
3
4
J
J
a
a
0.030 @ V
0.022 @ V
= 150_C)
= 150_C)
t
Si4804DY-T1 (with Tape and Reel)
Si4804DY—E3 (Lead (Pb)-Free)
Si4804DY-T1—E3 (Lead (Pb)-Free with Tape and Reel)
a
a
Top View
Parameter
Parameter
SO-8
r
DS(on)
Dual N-Channel 30-V (D-S) MOSFET
a
a
GS
GS
(W)
= 4.5 V
= 10 V
8
7
6
5
a
D
D
D
D
1
1
2
2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
L = 0 1 mH
L = 0.1 mH
T
T
T
T
t v 10 sec
A
A
A
A
I
= 25_C
= 70_C
= 25_C
= 70_C
D
7.5
6.5
(A)
Symbol
Symbol
FEATURES
D TrenchFETr Power MOSFET
D 100% R
T
R
R
R
V
J
V
E
I
I
P
P
DM
, T
I
I
I
AS
thJA
thJF
DS
GS
D
D
S
AS
D
D
stg
G
1
g
N-Channel MOSFET
Tested
10 secs
Typical
7.5
6.0
1.7
2.0
1.3
52
93
35
D
S
1
1
−55 to 150
"20
30
20
10
5
G
Steady State
2
Maximum
Vishay Siliconix
N-Channel MOSFET
62.5
110
5.7
4.6
0.9
1.1
0.7
40
D
S
Si4804DY
2
2
www.vishay.com
Available
Unit
Pb-free
Unit
_C/W
C/W
mJ
_C
W
W
V
V
A
1

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SI4804DY-E3 Summary of contents

Page 1

... Top View Ordering Information: Si4804DY Si4804DY-T1 (with Tape and Reel) Si4804DY—E3 (Lead (Pb)-Free) Si4804DY-T1—E3 (Lead (Pb)-Free with Tape and Reel) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a a Continuous Drain Current (T Continuous Drain Current (T = 150_C) ...

Page 2

... Si4804DY Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current a On-State Drain Current a a Drain-Source On-State Resistance Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic ...

Page 3

... V − Source-to-Drain Voltage (V) SD Document Number: 71088 S-50524—Rev. E, 28-Mar-05 1000 25_C J 0.8 1.0 1.2 Si4804DY Vishay Siliconix Capacitance 800 C iss 600 400 C oss C 200 rss − Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 ...

Page 4

... Si4804DY Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 0 250 mA D −0.0 −0.2 −0.4 −0.6 −0.8 −50 − − Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 −4 − Normalized Thermal Transient Impedance, Junction-to-Foot ...

Page 5

All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...

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