TWR-12311-KIT-NA Freescale Semiconductor, TWR-12311-KIT-NA Datasheet - Page 16

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TWR-12311-KIT-NA

Manufacturer Part Number
TWR-12311-KIT-NA
Description
Development Boards & Kits - Other Processors Tower Kit for NA
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of TWR-12311-KIT-NA

Rohs
yes
Product
Development Systems
Tool Is For Evaluation Of
MC12311
Core
HCS08
Interface Type
SPI, USB
Operating Supply Voltage
3.5 V to 10 V
Data Bus Width
8 bit
For Use With
MC12311
12311-MRB
3-4
Current consumption
Temperature
Operating temperature (see note)
Storage temperature
RF Receiver
FSK Sensitivity
OOK Sensitivity
Adjacent channel Rejection (Offset =
+/- 25 KHz or 50 KHz)
2nd order Intercept point
3rd order Intercept point
RSSI dynamic range
RF Transmitter
RF Power Output (RFIO pin)
RF Power Output (PA_Boost pin)
Adjacent channel Power (25KHz
offset)
Regulatory Approval
FCC
CE (ETSI)
CE (EMC)
Safety
UL
Environment
RoHS
WEEE
Parameter
12311 Development Hardware Reference Manual, Rev. 0.0
Table 3-1. 12311-MRB Specifications (continued)
-115
-40
-30
-18
-105
-120
-112
+25
+25
+75
+20
+17
-42
to
TBD
+70
+70
+13
-37
0
Units
dBm
dBm
dBm
dBm
dBm
dBm
dBm
mA
dB
°C
°C
Programmable in 1dB steps
Product is approved accordingly to the EN
Product is approved accordingly to the EN
Product complies with the EU Directive
Product is approved accordingly to the FCC
part 15 standard
300 328 V1.7.1 (2006-10) standard
301 489-1 V1.6.1 (2005-09) and EN 301
489-17 V1.2.1 (2002-08) standards
Product is approved accordingly to the IEC
60950-1 and EN 60950-1, First Edition
standards
Product complies with the EU Directive
2002/95/EC of 27 January 2003
2002/95/EC of 27 January 2003
• Operating temperature is limited to +70
°C due to switches. Basic circuit is good
for a maximum temperature of +85 °C.
Notes/Conditions
Freescale Semiconductor

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