TWR-12311-KIT-NA Freescale Semiconductor, TWR-12311-KIT-NA Datasheet - Page 34

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TWR-12311-KIT-NA

Manufacturer Part Number
TWR-12311-KIT-NA
Description
Development Boards & Kits - Other Processors Tower Kit for NA
Manufacturer
Freescale Semiconductor
Datasheet

Specifications of TWR-12311-KIT-NA

Rohs
yes
Product
Development Systems
Tool Is For Evaluation Of
MC12311
Core
HCS08
Interface Type
SPI, USB
Operating Supply Voltage
3.5 V to 10 V
Data Bus Width
8 bit
For Use With
MC12311
PCB Manufacturing Specifications
4.2
The panel size can be negotiated depending on production volume.
4.3
The PCB composite materials must meet the following requirements:
4-2
Solder mask is required
Silk screen is required
Laminate - The base laminate material (laminate) must be FR4. If the laminate material were
changed the RF electrical characteristics may change and degrade RF performance.
Layer
Panelization
Materials
1
2
3
4
5
6
The MC12311 contains sub 1 GHz RF circuitry. As a result, RF component
placement, line geometries and layout, and spacing to the ground plane are
critical parameters. As a result, BOARD STACKUP GEOMETRY IS
CRITICAL. Dielectric and copper thicknesses and spacing must not be
changed; follow the stackup (see
the reference design.
Silkscreen Top
Top Layer Metal
Ground Layer
Power Layer
Bottom Layer Metal
Silkscreen Bottom
Figure 4-1. MC12311 PCB Stackup Cross-Section (Four Layer)
12311 Development Hardware Reference Manual, Rev. 0.0
Table 4-1. MC12311 Layer by Layer Overview
Artwork Identification
Dielectric
Dielectric
Dielectric
Figure
NOTE
4-1) information is provided with
SILK_TOP.art
TOP.art
GND.art
PWR.art
BOTTOM.art
SILK_BOTTOM.art
Metal 4
Metal 3
Metal 2
Metal 1
File Name
Freescale Semiconductor

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