VS-16TTS12FPPBF Vishay Semiconductors, VS-16TTS12FPPBF Datasheet - Page 2

• Manufacturer Part Number: VS-16TTS12FPPBF
• Description: SCRs 1200 Volt 16 Amp
• Manufacturer: Vishay Semiconductors

Specifications of VS-16TTS12FPPBF

• Product Category: SCRs
• Rohs: yes
• Breakover Current Ibo Max: 200 A
• Rated Repetitive Off-state Voltage Vdrm: 1200 V
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Forward Voltage Drop: 1.4 V
• Gate Trigger Voltage (vgt): 2 V
• Maximum Gate Peak Inverse Voltage: 10 V
• Gate Trigger Current (igt): 60 mA
• Holding Current (ih Max): 100 mA
• Mounting Style: Through Hole
• Package / Case: TO-220

Revision: 10-Nov-11
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
Maximum RMS on-state current
Maximum peak, one-cycle,
non-repetitive surge current
Maximum I
Maximum I
Maximum on-state voltage drop
On-state slope resistance
Threshold voltage
Maximum reverse and direct leakage current
Holding current
Maximum latching current
Maximum rate of rise of off-state voltage
Maximum rate of rise of turned-on current
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
Maximum required DC gate current to trigger
Maximum required DC gate
voltage to trigger
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
SWITCHING
PARAMETER
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
For technical questions within your region: [e-mail], [e-mail],
2
2
t for fusing
t for fusing
www.vishay.com
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
VS-16TTS..FPPbF Series, VS-16TTS...FP-M3 Series
SYMBOL
SYMBOL
SYMBOL
I
RM
P
- V
V
+ I
dV/dt
I
P
I
I
dI/dt
V
V
V
T(AV)
I
RMS
G(AV)
I
I
TSM
T(TO)
2
I
GD
t
I
GT
t
t
r
I
GM
GD
2
TM
GT
/I
H
gt
t
L
GM
rr
q
t
GM
t
DM
T
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
10 A, T
T
T
T
Anode supply = 6 V, resistive load, initial I
16TTS08FP, 16TTS12FP
Anode supply = 6 V, resistive load
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
T
T
T
J
J
J
C
J
J
J
= 125 °C, V
= 25 °C
= 125 °C
= 125 °C
= 25 °C
= 125 °C
= 95 °C, 180° conduction, half sine wave
2
J
= 25 °C
DRM
V
TEST CONDITIONS
TEST CONDITIONS
R
TEST CONDITIONS
= Rated V
= Rated value
www.vishay.com/doc?91000
RRM
RRM
RRM
applied
applied
/V
DRM
J
J
J
J
J
J
Vishay Semiconductors
= - 10 °C
= 25 °C
= 125 °C
= - 10 °C
= 25 °C
= 125 °C
T
= 1 A
[e-mail]
Document Number: 94381
TYP. MAX.
VALUES
VALUES
-
VALUES
2000
24.0
170
200
144
200
200
500
150
1.4
1.1
0.5
8.0
2.0
1.5
3.0
2.0
1.0
0.2
2.0
10
16
10
10
90
60
35
110
0.9
4
100
UNITS
UNITS
UNITS
A
V/μs
A/μs
m
mA
mA
A
mA
μs
W
2
A
V
A
V
V
V
2
s
s