SI7403DN-T1 Vishay/Siliconix, SI7403DN-T1 Datasheet
SI7403DN-T1
Specifications of SI7403DN-T1
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SI7403DN-T1 Summary of contents
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... 85_C stg Symbol sec R thJA Steady State Steady State R thJC Si7403DN Vishay Siliconix D TrenchFETr Power MOSFETS: 2.5-V Rated D New PowerPAKt Package – Low Thermal Resistance, R thJC – Low 1.07-mm Profile D Load Switching D PA Switching P-Channel MOSFET ...
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... Si7403DN Vishay Siliconix _ Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time ...
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... Source-to-Drain Voltage (V) SD Document Number: 71431 S-03390—Rev. A, 02-Apr-01 New Product _ 1400 1200 1000 = 4 0.30 0.24 0. 25_C J 0.12 0.06 0.00 1.25 1.50 Si7403DN Vishay Siliconix Capacitance 800 600 400 C oss 200 C rss – Drain-to-Source Voltage (V) DS On-Resistance vs. Junction Temperature 1 4 ...
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... Si7403DN Vishay Siliconix Threshold Voltage 0.4 0.3 0.2 = 250 0.1 0.0 –0.1 –0.2 –50 – – Temperature (_C) J Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 –4 – Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse ...
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All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or ...