SI7404DN-T1 Vishay/Siliconix, SI7404DN-T1 Datasheet

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SI7404DN-T1

Manufacturer Part Number
SI7404DN-T1
Description
MOSFET 30V 13.3A 3.8W
Manufacturer
Vishay/Siliconix
Datasheet

Specifications of SI7404DN-T1

Product Category
MOSFET
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
8.5 A
Resistance Drain-source Rds (on)
13 mOhms
Configuration
Single
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
PowerPAK 1212-8
Fall Time
39 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
1.5 W
Rise Time
39 ns
Factory Pack Quantity
3000
Typical Turn-off Delay Time
64 ns

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI7404DN-T1-E3
Manufacturer:
FAIRCHILD
Quantity:
30
Part Number:
SI7404DN-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI7404DN-T1-GE3
Quantity:
227
Part Number:
SI7404DN-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI7404DN-T1-GE3.
Quantity:
1 410
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed cop-
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71658
S11-2045-Rev. G, 17-Oct-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Ordering Information:
ABSOLUTE MAXIMUM RATINGS (T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Single Avalanche Current
Single Avalanche Energy (Duty Cycle 1 %)
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Soldering Recommendations
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
PRODUCT SUMMARY
per (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
V
DS
30
(V)
8
3.30 mm
D
7
D
6
D
PowerPAK
Bottom View
N-Channel 30 V (D-S) Fast Switching MOSFET
5
0.015 at V
0.022 at V
0.013 at V
D
Si7404DN-T1-E3 (Lead (Pb)-free)
Si7404DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
DS(on)
J
a
b,c
1
®
= 150 °C)
a
S
1212-8
GS
GS
GS
2
()
= 4.5 V
= 2.5 V
S
= 10 V
3
a
S
3.30 mm
4
G
This document is subject to change without notice.
a
Steady State
Steady State
A
T
T
T
T
t 10 s
A
A
A
A
I
0.1 mH
= 25 °C, unless otherwise noted)
D
13.3
12.4
10.2
= 25 °C
= 70 °C
= 25 °C
= 70 °C
(A)
Symbol
Symbol
T
R
R
J
V
V
E
I
I
P
, T
I
DM
thJA
thJC
AS
I
FEATURES
APPLICATIONS
DS
GS
AS
D
S
D
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Li-lon Battery Protection
stg
Available
Compliant to RoHS Directive 2002/95/EC
Typical
®
10 s
13.3
10.6
3.2
3.8
2.0
1.9
26
65
Power MOSFET
G
N-Channel MOSFET
- 55 to 150
± 12
260
30
40
15
11
D
S
Steady State
Maximum
8.5
6.8
1.3
1.5
0.8
2.4
33
81
Vishay Siliconix
www.vishay.com/doc?91000
Si7404DN
www.vishay.com
°C/W
Unit
Unit
mJ
°C
W
V
A
A
1

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SI7404DN-T1 Summary of contents

Page 1

... Bottom View Ordering Information: Si7404DN-T1-E3 (Lead (Pb)-free) Si7404DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Single Avalanche Current Single Avalanche Energy (Duty Cycle 1 %) ...

Page 2

... Si7404DN Vishay Siliconix MOSFET SPECIFICATIONS (T Parameter Symbol Static V Gate Threshold Voltage GS(th) I Gate-Body Leakage GSS I Zero Gate Voltage Drain Current DSS a I On-State Drain Current D(on Drain-Source On-State Resistance DS(on Forward Transconductance a V Diode Forward Voltage b Dynamic Q Total Gate Charge Q Gate-Source Charge ...

Page 3

... 1.8 1.6 1.4 1.2 1.0 0.8 0 0.05 0.04 0.03 0. °C J 0.01 0.00 0.8 1.0 1.2 This document is subject to change without notice. Si7404DN Vishay Siliconix C iss C oss C rss Drain-to-Source Voltage (V) DS Capacitance 13 100 125 T - Junction Temperature (°C) J On-Resistance vs ...

Page 4

... Si7404DN Vishay Siliconix TYPICAL CHARACTERISTICS (T 0. 0.15 0.00 - 0.15 - 0.30 - 0. Temperature (°C) J Threshold Voltage www.vishay.com 4 THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH °C, unless otherwise noted 100 125 150 ...

Page 5

... THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH °C, unless otherwise noted Square Wave Pulse Duration ( Square Wave Pulse Duration (s) This document is subject to change without notice. Si7404DN Vishay Siliconix Notes Duty Cycle Per Unit Base = ° ...

Page 6

PowerPAK 1212-8, (SINGLE/DUAL Notes: 1. Inch will govern 2 Dimensions exclusive of mold gate burrs 3. Dimensions exclusive of mold flash and cutting burrs DIM. MIN. A 0.97 A1 0.00 b ...

Page 7

... To take the advantage of the single PowerPAK 1212-8’s thermal performance see Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 single in the index of this document. In this figure, the drain land pattern is given to make full contact to the drain pad on the PowerPAK package ...

Page 8

... Application Note 826, Recommended Minimum Pad Patterns With Outline Drawing Access for Vishay Siliconix MOSFETs. Click on the PowerPAK 1212-8 dual in the index of this doc- ument. The gap between the two drain pads is 10 mils. This matches the spacing of the two drain pads on the Pow- erPAK 1212-8 dual package ...

Page 9

TABLE 1: EQIVALENT STEADY STATE PERFORMANCE Package Configuration Single Thermal Resiatance R (C/W) thJC PowerPAK 1212 49.8 °C 2.4 °C/W PC Board at 45 °C THERMAL PERFORMANCE Introduction A basic measure of a device’s thermal performance is the junction-to-case thermal ...

Page 10

AN822 Vishay Siliconix 105 Spreading Copper (sq. in 100 % 0.00 0.25 0.50 0.75 1.00 Figure 5. Spreading Copper - Si7401DN CONCLUSIONS As a derivative of the PowerPAK SO-8, the PowerPAK 1212-8 ...

Page 11

RECOMMENDED MINIMUM PADS FOR PowerPAK 0.039 (0.990) 0.016 (0.405) 0.026 (0.660) Return to Index Return to Index Document Number: 72597 Revision: 21-Jan-08 Application Note 826 ® 1212-8 Single 0.152 (3.860) 0.068 (1.725) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions ...

Page 12

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), ...

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