FDB6021P_Q Fairchild Semiconductor
FDB6021P_Q
Manufacturer Part Number
FDB6021P_Q
Description
MOSFET P-Channel PowerTrench
Manufacturer
Fairchild Semiconductor
Specifications of FDB6021P_Q
Product Category
MOSFET
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
- 28 A
Resistance Drain-source Rds (on)
0.03 Ohms at - 4.5 V
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
TO-263
Fall Time
50 ns
Forward Transconductance Gfs (max / Min)
33 S
Minimum Operating Temperature
- 65 C
Power Dissipation
37 W
Rise Time
10 ns
Typical Turn-off Delay Time
80 ns
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